TO-92K package SCR JSCJ CS008G 10-30uA sensitive gate thyristor for leakage protectors and ignition systems
Key Attributes
Model Number:
CS008G 10-30uA
Product Custom Attributes
Mfr. Part #:
CS008G 10-30uA
Package:
TO-92-3
Product Description
Product Overview
The CS008G is a sensitive gate SCR (Silicon Controlled Rectifier) featuring a PNPN 4-layer structure with mesa glass passivated technology and multi-layer metal electrodes. Designed for sensitive gate triggering, it is ideal for applications such as pulse igniters, logic circuit drivers, and leakage protectors. Its TO-92K plastic-encapsulated thyristor package ensures reliable performance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: TO-92K
- Marking: CS008G (Part Number), XXX (Internal Code)
- Origin: China (implied by company name and website)
Technical Specifications
| Symbol | Parameter | Test Condition | Value | Unit |
|---|---|---|---|---|
| VDRM/VRRM | Repetitive peak off-state voltage | Tj=25 | 600 | V |
| IT(RMS) | RMS on-state current | 0.8 | A | |
| IT(AV) | Average on-state current | TO-92K(TC63) | 0.5 | A |
| ITSM | Non repetitive surge peak on-state current | Full sine wave, Tj(init)=25, tp=20ms; Fig. 3,5 | 8 | A |
| I2t | I2t value | tp=10ms | 0.32 | A2s |
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT, tr10ns, F=120HZ, Tj=110 | 50 | A/s |
| IGM | Peak gate current | tp=20s, Tj=110 | 0.2 | A |
| PG(AV) | Average gate power | Tj=110 | 0.1 | W |
| IGT | Gate trigger current | Fig. 6, VD=12V, Tj=25 | 200 | A |
| VGT | Gate trigger voltage | VD=12V, IT =10mA, Tj=25 | 0.8 | V |
| VGD | Non-triggering gate voltage | VD=VDRM, Tj=125 | 0.2 | V |
| IH | Holding current | VD=12V, IT =10mA, Tj=25 | 10 | mA |
| IL | Latching current | IG=0.5mA, RGK=1k, Tj=110 | 10 | mA |
| dVD/dt | Critical rate of rise of off-state | VD=67%VDRM, RGK=1k,Tj=110 | 3 | V/s |
| VTM | On-state Voltage | ITM=1.2A, Fig. 4 | 1.5 | V |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=25 | 200 | A |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM,Tj=110 | 3 | mA |
| TSTG | Storage temperature | -40~+150 | ||
| Tj | Operating junction temperature | -40~+110 | ||
| Rth(j-c) | Junction to case (AC) | 75 | /W | |
| Rth(j-a) | Junction to ambient | 150 | /W |
2411121117_JSCJ-CS008G-10-30uA_C527810.pdf
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