Power Management PNP Transistor JSCJ CJMNT31 with Integrated NMOSFET in Compact DFNWB2x2 6L Package
Key Attributes
Model Number:
CJMNT31
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
800mA
RDS(on):
1.3Ω@1.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
1.15nC@4.5V
Mfr. Part #:
CJMNT31
Package:
DFNWB-6L(2x2)
Product Description
Product Overview
The CJMNT31 is a PNP Power Transistor with an integrated N-MOSFET, designed for power management applications in portable equipment. It features an ultra-low collector-to-emitter saturation voltage, high DC current gain, and comes in a compact DFNWB2x2-6L package. This device is ideal for charging circuits and other power management functions.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: 31
- Package: DFNWB2x2-6L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| PNP Transistor | ||||||
| Collector-Base Voltage | VCBO | -30 | V | |||
| Collector-Emitter Voltage | VCEO | -30 | V | |||
| Emitter-Base Voltage | VEBO | -6 | V | |||
| Collector Current-Continuous (Note 1) | IC | -3 | A | |||
| Collector Current-Continuous (Note 2) | IC | -2 | A | |||
| Collector Current-Pulse (Note 3) | ICM | -6 | A | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-1mA,IE=0 | -30 | V | ||
| Collector-emitter breakdown | V(BR)CEO | IC=-10mA,IB=0 | -30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A,IC=0 | -6 | V | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -0.1 | A | ||
| DC current gain | hFE | VCE=-2V, IC=-1A | 100 | 300 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-2A,IB=-200mA | -0.2 | -0.4 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=-2A,IB=-200mA | -1 | -1.5 | V | |
| Base-emitter voltage | VBE(on) | VCE=-2V, IC=-500mA | -0.7 | -1 | V | |
| N-MOSFET | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 6 | V | |||
| Drain Current -Continuous (Note 1) | ID | 0.8 | A | |||
| Drain Current -Continuous (Note 2) | ID | 0.69 | A | |||
| Drain Current - Pulse (Note 3) | IDM | 1.4 | A | |||
| Drain-source breakdown voltage | V (BR)DSS | VGS =0V, ID=250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =5V, VDS = 0V | 5 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.45 | 1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.55A | 360 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =0.45A | 410 | m | ||
| Drain-source on-resistance | RDS(on) | VGS =1.8V, ID =0.35A | 600 | m | ||
| Diode forward voltage | VSD | IS=0.35A, VGS = 0V | 0.5 | 1 | V | |
| Power Dissipation, Temperature and Thermal Resistance | ||||||
| Power Dissipation (Tc=25,Note 1) | PC | 2.5 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 179 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Lead Temperature | TL | 260 | ||||
2410121912_JSCJ-CJMNT31_C2910047.pdf
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