Plastic Encapsulated N Channel MOSFET JSCJ CJK8804 with ESD Protection and Load Switching Performance
Key Attributes
Model Number:
CJK8804
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-40℃~+150℃
RDS(on):
13.3mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
17.9nC@10V
Mfr. Part #:
CJK8804
Package:
SOT-23-3L
Product Description
Product Overview
The CJK8804 is an N-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is ESD protected and suitable for load/power switching and interfacing switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate
- Package: SOT-23-3L
- Color: Normal device (Solid dot = Green molding compound device)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 7 | A | |||
| Pulsed Drain Current | IDM | * | 25 | A | ||
| Power Dissipation | PD | 0.75 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 249 | ℃/W | |||
| Junction Temperature | Tj | 150 | ℃ | |||
| Storage Temperature | Tstg | -55 | +150 | ℃ | ||
| Lead Temperature for Soldering Purposes | TL | (1/8'' from case for 10 s) | 260 | ℃ | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 5 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3A | 9.8 | 13 | m℉ | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =3A | 10.5 | 14 | m℉ | |
| Drain-source on-resistance | RDS(on) | VGS =3.8V, ID =3A | 11.1 | 15.5 | m℉ | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =3A | 13.3 | 19 | m℉ | |
| Forward tranconductance | gFS | VDS =5V, ID =3A | 17 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| DYNAMIC PARAMETERS (note 2) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1800 | pF | ||
| Output Capacitance | Coss | 230 | pF | |||
| Reverse Transfer Capacitance | Crss | 200 | pF | |||
| SWITCHING PARAMETERS(note 2) | ||||||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =3A | 17.9 | nC | ||
| Gate-source charge | Qgs | 1.5 | nC | |||
| Gate-drain charge | Qg d | 4.7 | nC | |||
| Turn-on delay time | td(on) | VGS=10V,VDS=10V, RL=1.2 ℉,RGEN=3 ℉ | 2.5 | ns | ||
| Turn-on rise time | tr | 7.2 | ns | |||
| Turn-off delay time | td(off) | 49 | ns | |||
| Turn-off fall time | tf | 10.8 | ns | |||
2410121848_JSCJ-CJK8804_C504114.pdf
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