Dual N Channel MOSFET JSCJ CJS8804 with trench technology low RDS ON and integrated ESD protection
Key Attributes
Model Number:
CJS8804
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.8mΩ@10V,8A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
2 N-Channel
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
17.9nC
Mfr. Part #:
CJS8804
Package:
TSSOP-8
Product Description
Product Overview
The JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJS8804 is a dual N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with integrated ESD protection. Its common-drain configuration makes it suitable for uni-directional or bi-directional load switch applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJS8804
- Package Type: TSSOP8 Plastic-Encapsulate
- Origin: China
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 10 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =8A | 9.8 | 13 | m | |
| VGS =4.5V, ID =5A | 10.5 | 14 | m | |||
| VGS =3.8V, ID =5A | 11.1 | 15.5 | m | |||
| VGS =2.5V, ID =4A | 13.3 | 19 | m | |||
| VGS =1.8V, ID =3A | 19.6 | 27 | m | |||
| Forward tranconductance | gFS | VDS =5V, ID =8A | 17 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS = 0V | 1 | V | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1800 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 230 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 200 | pF | ||
| Total gate charge | Qg | VDS =10V,VGS =4.5V,ID =8A | 17.9 | nC | ||
| Gate-source charge | Qgs | VDS =10V,VGS =4.5V,ID =8A | 1.5 | nC | ||
| Gate-drain charge | Qgd | VDS =10V,VGS =4.5V,ID =8A | 4.7 | nC | ||
| Turn-on delay time | td(on) | VGS=10V,VDS=10V, RL=1.2,RGEN=3 | 2.5 | ns | ||
| Turn-on rise time | tr | VGS=10V,VDS=10V, RL=1.2,RGEN=3 | 7.2 | ns | ||
| Turn-off delay time | td(off) | VGS=10V,VDS=10V, RL=1.2,RGEN=3 | 49 | ns | ||
| Turn-off fall time | tf | VGS=10V,VDS=10V, RL=1.2,RGEN=3 | 10.8 | ns |
2410122007_JSCJ-CJS8804_C504160.pdf
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