NPN Silicon Transistor JSMSEMI S8050 Featuring 25 Volt Collector Emitter Voltage and 0.5 Amp Current
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8050
Package:
TO-92
Product Description
Product Overview
The S8050 is an NPN Silicon General Purpose Transistor, complementary to the S8550. It is designed for general-purpose applications with a collector current rating of IC = 0.5 A.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: S8050
- Type: NPN Silicon General Purpose Transistor
- Complementary to: S8550
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
| Collector to Base Voltage | VCBO | 40 | V | |
| Collector to Emitter Voltage | VCEO | 25 | V | |
| Emitter to Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 500 | mA | |
| Total Power Dissipation | PD | 625 | mW | Ta = 25C |
| Junction, Storage Temperature | TJ, TSTG | -55 ~ +150 | ||
| Collector-base Breakdown Voltage | V(BR)CBO | 40 | V | IC = 100 A, IE = 0 |
| Collector-emitter Breakdown Voltage | V(BR)CEO | 25 | V | IC = 0.1 mA, IB = 0 |
| Emitter-base Breakdown Voltage | V(BR)EBO | 5 | V | IE = 100 A, IC = 0 |
| Collector Cut-off Current | ICBO | 0.1 | A | VCB = 40 V, IE = 0 |
| Collector Cut-off Current | ICEO | 0.1 | A | VCE = 20 V, IB = 0 |
| Emitter Cut-off Current | IEBO | 0.1 | A | VEB = 5 V, IC = 0 |
| DC Current Gain | hFE(1) | 85 - 400 | VCE = 1 V, IC = 50 mA | |
| DC Current Gain | hFE(2) | 50 - | VCE = 1 V, IC = 500 mA | |
| Collector-emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC = 500 mA, IB = 50 mA |
| Base-emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC = 500 mA, IB = 50 mA |
| Transition Frequency | fT | 150 | MHz | VCE = 6 V, IC= 20 mA, f = 30 MHz |
2401050928_JSMSEMI-S8050_C2931492.pdf
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