General purpose switching and amplifier transistor JSMSEMI MMBT2907A PNP type with planar die design
Key Attributes
Model Number:
MMBT2907A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description
Product Overview
The MMBT2907A is a PNP general-purpose amplifier and switching transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, with a useful dynamic range extending to 600mA as a switch and to 100MHz as an amplifier. A complementary NPN type, the MMBT2222A, is also available.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: SOT-23
- Certifications: JEDEC Class 3A (ESD HBM)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A, IE=0 | -60 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA, IB=0 | -60 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | |
| Collector cut-off current | ICBO | VCB=-50V, IE=0 | -10 | nA | |
| Collector cut-off current | ICBO | VCB=-50V, IE=0, TA=125 | -10 | A | |
| Collector cut-off current | ICEX | VCE=-30V,VBE(OFF)=-0.5V | -50 | nA | |
| Base cut-off current | IBL | VCE=-30V,VBE(OFF)=-0.5V | -50 | nA | |
| DC current gain | hFE | VCE=-10V, IC=-100A | 75 | 300 | |
| VCE=-10V, IC=-1mA | 100 | ||||
| VCE=-10V, IC=-10mA | 100 | ||||
| VCE=-10V, IC=-150mA | 100 | ||||
| VCE=-10V, IC=-500mA | 50 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-150mA, IB=-15mA | -0.4 | V | |
| IC=-500mA, IB=-50mA | -1.6 | V | |||
| Base-emitter saturation voltage | VBE(sat) | IC=-150mA, IB=-15mA | -1.3 | V | |
| IC=-500mA, IB=-50mA | -2.6 | V | |||
| Transition frequency | fT | VCE=-20V, IC=-50mA, f=100MHz | 200 | MHz | |
| Output Capacitance | Cobo | VCB=-10V, f=100kHz, IE=0 | 8.0 | pF | |
| Input Capacitance | Cibo | VEB=-2V, f=100kHz, IC=0 | 30 | pF | |
| Delay time | td | VCE=-30V, IC=-150mA, IB1=-15mA | 10 | ns | |
| Rise time | tr | VCE=-6V, IC=-150mA, IB1=-IB2=-15mA | 40 | ns | |
| Storage time | ts | VCE=-6V, IC=-150mA, IB1=-IB2=-15mA | 225 | ns | |
| Fall time | tf | VCE=-6V, IC=-150mA, IB1=-IB2=-15mA | 60 | ns |
2306301522_JSMSEMI-MMBT2907A_C916373.pdf
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