SOT 23 packaged N channel MOSFET JSCJ 2N7002K 72K featuring low RDS on and high saturation current
Key Attributes
Model Number:
2N7002K 72K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
2N7002K 72K
Package:
SOT-23
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002K is an N-channel MOSFET in a SOT-23 package. It features a high-density cell design for low RDS(on) and is suitable as a voltage-controlled small signal switch. This rugged and reliable MOSFET offers high saturation current capability and ESD protection up to 2KV.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Material: Plastic-Encapsulate
- Certifications: ESD protected up to 2KV
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| MAXIMUM RATINGS | ||||||
| Drain-Source voltage | VDS | 60 | V | |||
| Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | 0.35 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage* | VGS(th) | VDS =VGS, ID =1mA | 1 | 2.5 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS1 | VGS =20V, VDS = 0V | 10 | A | ||
| Gate Source leakage current | IGSS2 | VGS =10V, VDS = 0V | 200 | nA | ||
| Gate Source leakage current | IGSS3 | VGS =5V, VDS = 0V | 100 | nA | ||
| Drain-Source On-Resistance* | RDS(on) | VGS = 4.5V, ID =200mA | 5.3 | |||
| Drain-Source On-Resistance* | RDS(on) | VGS =10V,ID =500mA | 5 | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | nC | ||
| Dynamic Characteristics** | ||||||
| Input Capacitance | Ciss | 40 | pF | |||
| Output Capacitance | Coss | 30 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Switching Characteristics** | ||||||
| Turn-On Delay Time | td(on) | 10 | ns | |||
| Turn-Off Delay Time | td(off) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 15 | ns | ||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | nC | ||
| GATE-SOURCE ZENER DIODE | ||||||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA (Open Drain) | 21.5 | 30 | V | |
| Gate-Source voltage | VGS | 20 | V | |||
2410121524_JSCJ-2N7002K-72K_C38161.pdf
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