Power MOSFET JSCJ CJFB30H20 N Channel with Plastic Encapsulate Package and Excellent Thermal Performance
Key Attributes
Model Number:
CJFB30H20
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 N-channel
Input Capacitance(Ciss):
823pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
CJFB30H20
Package:
DFNWB-8(5x6)
Product Description
Product Overview
The CJFB30H20 is an N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including full bridge switches, load switches, SMPS, general purpose applications, and hard switched/high frequency circuits. Key features include a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, an excellent package for heat dissipation, and special process technology for high ESD capability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJFB30H20
- Package: DFNWB5x6-8L-E
- Material: Plastic-Encapsulate
- Origin: China (implied by manufacturer name)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | Ta=25 | 20 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Single Pulsed Avalanche Energy | EAS(1) | 70 | mJ | |||
| Power Dissipation | PD | Ta=25 | 1.5 | W | ||
| Thermal Resistance from Junction to Ambient | RJA | (2) | 83.3 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | ~+150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.7 | 3.0 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =10A | 8.5 | 12 | mΩ | |
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =10A | 12 | 18 | mΩ | |
| Forward transconductance | gFS | VDS =5V, ID =20A | 15 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 823 | pF | ||
| Output capacitance | Coss | 138 | ||||
| Reverse transfer capacitance | Crss | 100 | ||||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=15V, VGS=10V, ID=9A | 13 | nC | ||
| Gate-source charge | Qgs | 3 | ||||
| Gate-drain charge | Qg | 4.5 | ||||
| Turn-on delay time | td(on) | VDS=15V,VGS=10V, RL=1.8Ω,RGEN=3Ω | 10 | ns | ||
| Turn-on rise time | tr | 8 | ||||
| Turn-off delay time | td(off) | 30 | ||||
| Turn-off fall time | tf | 5 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 20 | A | |||
| Pulsed drain-source diode forward current | ISM | 100 | A | |||
| Reverse Recovery Time | trr | TJ = 25°C, IF = 10A di/dt = 100A/μs(Note1) | 22 | 35 | ns | |
| Reverse Recovery Charge | Qrr | TJ = 25°C, IF = 10A di/dt = 100A/μs(Note1) | 12 | 20 | nC | |
2411121115_JSCJ-CJFB30H20_C504192.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
