TO92 Package Silicon PNP Transistor JSMSEMI 2N3906 for General Purpose Low Current Amplification
Key Attributes
Model Number:
2N3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
250MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
2N3906
Package:
TO-92
Product Description
Product Overview
The 2N3906 is a Silicon PNP transistor in a TO-92 Plastic Package. It is designed for general purpose amplification with low current and low voltage characteristics.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: TO-92 Plastic Package
- Transistor Type: PNP Silicon Transistor
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector to Base Voltage | VCBO | IC=-10A IE=0 | -40 | V | ||
| Collector to Emitter Voltage | VCEO | IC=-1.0mA IB=0 | -40 | V | ||
| Emitter to Base Voltage | VEBO | IE=-10A IC=0 | -5.0 | V | ||
| Collector Current - Continuous | IC | -200 | mA | |||
| Collector Power Dissipation | PC | 625 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Collector Cut-Off Current | ICBO | VCB=-40V IE=0 | -0.1 | A | ||
| Emitter Cut-Off Current | IEBO | VEB=-5.0V IC=0 | -0.1 | A | ||
| DC Current Gain | hFE | VCE=-1.0V IC=-10mA | 100 | 300 | ||
| VCE=-1.0V IC=-100mA | 30 | |||||
| Collector to Emitter Saturation Voltage | VCE(sat) | IC=-50mA IB=-5.0mA | -0.4 | V | ||
| Base to Emitter Saturation Voltage | VBE(sat) | IC=-50mA IB=-5.0mA | -0.95 | V | ||
| Current Gain Bandwidth Product | fT | IC=-10mA VCE=-20V f=100MHz | 250 | MHz | ||
| Output Capacitance | Cob | VCB=-5.0V IE=0 f=100KHz | 4.5 | pF | ||
| Turn On Time | Ton | VCC=-3.0V IC=-10mA VBE=-0.5V IB1=-1.0mA | 0.07 | s | ||
| Turn Off Time | Toff | VCC=-3.0V IC=-10mA IB1=-IB2=-1.0mA | 0.3 | s |
2201121200_JSMSEMI-2N3906_C2874603.pdf
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