Low RDS ON P Channel MOSFET JSCJ CJK3401AH in SOT 23 3L Package for Load Switching and DC DC Converter
Key Attributes
Model Number:
CJK3401AH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
CJK3401AH
Package:
SOT-23-3L
Product Description
Product Overview
The CJK3401AH is a P-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, designed with a high-density cell structure for extremely low RDS(ON). It offers exceptional on-resistance and maximum continuous drain current capabilities, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -4.2 | A | |||
| Power Dissipation | PD | (note 2) | 1.4 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | (note 2) | 89 | ℃/W | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | ℃ | ||
| Drain Current-Pulsed | IDM | (note 1) | -27 | A | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V,VGS = 0V | -1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±12V, VDS = 0V | ±100 | nA | ||
| On Characteristics | ||||||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4A (note 1) | 50 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-3.5A (note 1) | 47 | 60 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =-2.5V,ID=-2.5A (note 1) | 85 | mΩ | ||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A (note 1) | 7 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.7 | -1.3 | V | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz (note 3) | 1050 | pF | ||
| Output capacitance | Coss | VDS =-15V,VGS =0V,f =1MHz (note 3) | 127 | pF | ||
| Reverse transfer capacitance | Crss | VDS =-15V,VGS =0V,f =1MHz (note 3) | 85 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω (note 3) | 6.5 | ns | ||
| Turn-on rise time | tr | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω (note 3) | 3.5 | ns | ||
| Turn-off delay time | td(off) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω (note 3) | 40 | ns | ||
| Turn-off fall Time | tf | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=6Ω (note 3) | 13 | ns | ||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode forward voltage | VSD | IS=-1A,VGS=0V (note 1) | -1 | V | ||
2411121115_JSCJ-CJK3401AH_C504112.pdf
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