High current IGBT module JSCJ MCF600N170L2E3 ideal for motor drivers and high power converter systems
Key Attributes
Model Number:
MCF600N170L2E3
Product Custom Attributes
Pd - Power Dissipation:
3.66kW
Td(off):
595ns
Td(on):
160ns
Collector-Emitter Breakdown Voltage (Vces):
1.7kV
Reverse Transfer Capacitance (Cres):
0.52nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.5V@24mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
1200A
Switching Energy(Eoff):
115mJ
Turn-On Energy (Eon):
145mJ
Mfr. Part #:
MCF600N170L2E3
Package:
E3
Product Description
Product Overview
The JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD MCF600N170L2E3 module features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage for efficient use in drives and inverters. It boasts high short circuit capability, low switching loss, and high reliability. This module is ideal for high power converters, wind turbines, and motor driver applications.
Product Attributes
- Brand: JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: MCF600N170L2E3
- Origin: China
- Revision: 2.0
- Date: June 2022
Technical Specifications
| Parameter | Symbol | Condition | Value | Units |
| Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | 1700 | V | |
| Gate-Emitter Voltage | VGES | ±20 | V | |
| DC Collector Current, Tc=100 | IC | Tc=100 | 600 | A |
| Peak Collector Current, tp=1ms | ICM | tp=1ms | 1200 | A |
| Continuous Diode Forward Current | IF | 600 | A | |
| Diode Peak Forward Current, tp=1ms | IFRM | tp=1ms | 1200 | A |
| IGBT Maximum Power Dissipation | PD | 3660 | W | |
| IGBT Short Circuit Withstand Time | tsc | 10 | µs | |
| Maximum Junction Temperature | TvJ MAX | 175 | ||
| Operating Junction Temperature | TvJ | -40 to 150 | ||
| Storage Temperature | TSTG | -40 to 125 | ||
| Maximum lead temperature for soldering | TL | 260 | ||
| Electrical Characteristics (IGBT) | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=600A, VGE=15V | 1.80 / 2.20 / 2.30 | V (Tvj=25/125/150) |
| Gate-Emitter Threshold Voltage | VGE(th) | IC=24mA, VCE=VGE | 5.5 / 6.0 / 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1700V, VGE=0V | 1 | mA |
| Gate-Emitter Leakage Current | IGES | VCE=0V, VGE=±20V | -100 / 100 | nA |
| Internal Gate Resistance | RGint | Tvj=25 | 1.2 | Ω |
| Gate Charge | QG | VGE=-15V~+15V | 4.5 | µC |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz | 87.7 | nF |
| Reverse Transfer Capacitance | Cres | 0.52 | nF | |
| Turn-on Delay Time | td(on) | IC=600A, VCE=900V, VGE=±15V, RGon=1Ω, RGoff=1Ω, Inductive Load | 160 / 180 / 185 | ns (Tvj=25/125/150) |
| Rise Time | tr | IC=600A, VCE=900V, VGE=±15V, RGon=1Ω, RGoff=1Ω, Inductive Load | 95 / 125 / 130 | ns (Tvj=25/125/150) |
| Turn-off Delay Time | td(off) | IC=600A, VCE=900V, VGE=±15V, RGon=1Ω, RGoff=1Ω, Inductive Load | 595 / 645 / 665 | ns (Tvj=25/125/150) |
| Fall Time | tf | IC=600A, VCE=900V, VGE=±15V, RGon=1Ω, RGoff=1Ω, Inductive Load | 290 / 480 / 500 | ns (Tvj=25/125/150) |
| Turn-on Energy Loss | Eon | IC=600A, VCE=900V, VGE=±15V, RGon=1Ω, RGoff=1Ω, Inductive Load | 145 / 210 / 230 | mJ (Tvj=25/125/150) |
| Turn-off Energy Loss | Eoff | IC=600A, VCE=900V, VGE=±15V, RGon=1Ω, RGoff=1Ω, Inductive Load | 115 / 155 / 170 | mJ (Tvj=25/125/150) |
| Short Circuit Current | ISC | VGE≤15V, tp≤10us, VCC=1000V, Tvj=150 | 3030 | A |
| Electrical Characteristics (Diode) | ||||
| Forward Voltage | VF | IF=600A | 2.20 / 2.45 / 2.50 | V (Tvj=25/125/150) |
| Peak Reverse Recovery Current | IRm | IF=600A, VR=900V, VGE=-15V, diF/dt=-3600A/μs | 335 / 380 / 390 | A (Tvj=25/125/150) |
| Reverse Recovery Charge | Qrr | 80 / 160 / 185 | µC (Tvj=25/125/150) | |
| Reverse Recovery Energy Loss | Erec | 40 / 80 / 100 | mJ (Tvj=25/125/150) | |
| NTC-Thermistor | ||||
| Rated resistance | R25 | Tc=25 | 5.00 | KΩ |
| Power dissipation | P25 | 10 | mW | |
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298.15K))] | 3375 | K |
| Package Properties | ||||
| IGBT Thermal Resistance: Junction to Case | Rth(J-C) | per IGBT | 0.041 | K/W |
| Diode Thermal Resistance: Junction to Case | Rth(J-C) | per Diode | 0.060 | K/W |
| IGBT Thermal Resistance: Case to Heatsink | Rth(C-H) | per IGBT, λgrease=1W/(m•K) | 0.033 | K/W |
| Diode Thermal Resistance: Case to Heatsink | Rth(C-H) | per Diode, λgrease=1W/(m•K) | 0.037 | K/W |
| Isolation Voltage | Visol | RMS, f=50Hz, t=60s | 3.4 | kV |
| Creepage Distance | dcr | Terminal to Heatsink | 14 | mm |
| Creepage Distance | dcr | Terminal to Terminal | 13.5 | mm |
| Clearance Distance | dcl | Terminal to Heatsink | 12.5 | mm |
| Clearance Distance | dcl | Terminal to Terminal | 10 | mm |
| Comparative Tracking Index | CTI | >200 | ||
| Module Stray Inductance | Ls | CE per Switch | 20 | nH |
| Module lead Resistance, Terminal to Chip | RCC`+EE` | per Switch, TC=25 | 1.1 | mΩ |
| Mounting Torques | M | Baseplate to Heatsink, M5 | 3 / 6 | Nm |
| Mounting Torques | M | Power Terminal, M6 | 3 / 6 | Nm |
| Module Weight | G | 345 | g | |
2411121056_JSCJ-MCF600N170L2E3_C22392036.pdf
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