Power semiconductor JSCJ CGWT40N120F2KAD IGBT with TO-247 package and positive temperature coefficient
Key Attributes
Model Number:
CGWT40N120F2KAD
Product Custom Attributes
Td(off):
171ns
Pd - Power Dissipation:
357W
Td(on):
41ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
27.5pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@250uA
Gate Charge(Qg):
170.6nC@15V
Operating Temperature:
-40℃~+175℃
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
3mJ
Input Capacitance(Cies):
4.225nF
Pulsed Current- Forward(Ifm):
160A
Output Capacitance(Coes):
125pF
Mfr. Part #:
CGWT40N120F2KAD
Package:
TO-247
Product Description
Product Overview
The CGWT40N120F2KAD is a high-performance Insulated Gate Bipolar Transistor (IGBT) from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing their second-generation Trench and Field Stop (FS) structure. It offers a 1200V breakdown voltage, low Vce(sat), and a positive temperature coefficient, leading to low switching losses and good EMI behavior. Designed for parallel use, this IGBT is suitable for demanding applications such as solar power systems, Uninterruptible Power Supplies (UPS), Flexible Printed Circuits (FPC), and welding equipment.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CGWT40N120F2KAD
- Package: TO-247
- Marking: WT40N120F2KAD
- Origin: China (implied by company name and location)
- Color: Green molding compound device (indicated by solid dot on marking)
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
| Absolute Maximum Ratings | VCES | 1200 | V | |
| VGES | ±20 | V | ||
| IC | 80 | A | ||
| IC @ TC=100 | 40 | A | ||
| IC pulse | 160 | A | tp limited by TJmax | |
| Electrical Characteristics | V(BR)CES | 1200 | V | VGE=0V, ICE=1mA |
| ICES | 1.0 | mA | VGE=0V, VCE=1200V | |
| IGES | ±250 | nA | VGE=±20V | |
| VGE(th) | 4.5 - 7.5 | V | IC=250uA ,VCE=VGE | |
| Dynamic Parameters | Cies | 4225 | pF | VCE=30V,VGE=0V f=1MHz |
| Coes | 125 | pF | ||
| Cres | 27.5 | pF | ||
| Switching Parameters | td(on) | 41 | ns | VCE=600V, IC=40A, Rg=10, VGE=15V, Inductive Load TJ=25 |
| tr | 93 | ns | ||
| td(off) | 171 | ns | ||
| Switching Energy | Eon | 3 | mJ | (3) Including the reverse recovery of the diode. |
| Eoff | 1.4 | mJ | ||
| Ets | 4.4 | mJ | ||
| Thermal Characteristics | RJC (IGBT) | 0.42 | /W | |
| RJC (Diode) | 1.2 | /W |
2410121317_JSCJ-CGWT40N120F2KAD_C7543665.pdf
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