High current power module JSCJ MCF450N170L2E3 suitable for static var generators and inverter drives
Key Attributes
Model Number:
MCF450N170L2E3
Product Custom Attributes
Td(off):
640ns
Pd - Power Dissipation:
2.5kW
Td(on):
260ns
Collector-Emitter Breakdown Voltage (Vces):
1.7kV
Reverse Transfer Capacitance (Cres):
0.7nF
Input Capacitance(Cies):
60nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@18mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
900A
Switching Energy(Eoff):
105mJ
Turn-On Energy (Eon):
75mJ
Mfr. Part #:
MCF450N170L2E3
Package:
E3
Product Description
JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD MCF450N170L2E3
The MCF450N170L2E3 module, featuring JSCJ's advanced Trench and FS (Field Stop) IGBT technology, offers very low Collector-Emitter Saturation Voltage, making it easy to use in drives and inverters. Its key advantages include high short circuit capability, low switching loss, and high reliability, with a positive temperature coefficient. This module is ideally suited for applications such as wind converters, motor drives, and static var generators.
Product Attributes
- Brand: JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: MCF450N170L2E3
- Package Marking: E3
- Origin: China (implied by company name)
Technical Specifications
| Parameter | Symbol | Condition | Value | Units |
| Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | 1700 | V | |
| Gate-Emitter Voltage | VGES | ±20 | V | |
| DC Collector Current | IC | Tc=100 | 450 | A |
| Peak Collector Current | ICM | tp=1ms | 900 | A |
| Continuous Diode Forward Current | IF | 450 | A | |
| Diode Peak Forward Current | IFRM | tp=1ms | 900 | A |
| IGBT Maximum Power Dissipation | PD | 2500 | W | |
| IGBT Short Circuit Withstand Time | tsc | 10 | μs | |
| Maximum Junction Temperature | TvJ MAX | 175 | °C | |
| Operating Junction Temperature | TvJ | -40 to 150 | °C | |
| Storage Temperature | TSTG | -40 to 125 | °C | |
| Maximum lead temperature for soldering | TL | 260 | °C | |
| Electrical Characteristics (IGBT) | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=450A,VGE=15V, Tvj=25 | 1.80 | V |
| Tvj=125 | 2.20 | V | ||
| Tvj=150 | 2.30 | V | ||
| Gate-Emitter Threshold Voltage | VGE(th) | IC=18mA, VCE=VGE | 5.2 - 6.4 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1700V, VGE=0V | 3 | mA |
| Gate-Emitter Leakage Current | IGES | VCE=0V, VGE=±20V | -400 - 400 | nA |
| Internal Gate Resistance | RGint | Tvj=25 | 1.57 | Ω |
| Gate Charge | QG | VGE=-15V~+15V | 5.2 | μC |
| Input Capacitance | Cies | VCE=25V, VGE=0V, f=1MHz | 60.0 | nF |
| Reverse Transfer Capacitance | Cres | 0.7 | nF | |
| Turn-on Delay Time | td(on) | IC=450A, VCE=900V, VGE=±15V, RGon=3.3Ω, RGoff=3.3Ω, Inductive Load, Tvj=25 | 260 | ns |
| Tvj=125 | 280 | ns | ||
| Tvj=150 | 280 | ns | ||
| Rise Time | tr | Tvj=25 | 140 | ns |
| Tvj=125 | 160 | ns | ||
| Tvj=150 | 160 | ns | ||
| Turn-off Delay Time | td(off) | IC=450A, VCE=900V, VGE=±15V, RGon=3.3Ω, RGoff=3.3Ω, Inductive Load, Tvj=25 | 640 | ns |
| Tvj=125 | 700 | ns | ||
| Tvj=150 | 715 | ns | ||
| Fall Time | tf | IC=450A, VCE=900V, VGE=±15V, RGon=3.3Ω, RGoff=3.3Ω, Inductive Load, Tvj=25 | 405 | ns |
| Tvj=125 | 590 | ns | ||
| Tvj=150 | 595 | ns | ||
| Turn-on Energy Loss | Eon | Tvj=25 | 75 | mJ |
| Tvj=125 | 110 | mJ | ||
| Tvj=150 | 130 | mJ | ||
| Turn-off Energy Loss | Eoff | Tvj=25 | 105 | mJ |
| Tvj=125 | 130 | mJ | ||
| Tvj=150 | 140 | mJ | ||
| Short Circuit Current | ISC | VGE≤15V, tp≤10us, VCC=1000V, Tvj=150 | 2300 | A |
| Electrical Characteristics (Diode) | ||||
| Forward Voltage | VF | IF=450A, Tvj=25 | 2.00 | V |
| Tvj=125 | 2.20 | V | ||
| Tvj=150 | 2.20 | V | ||
| Reverse Recovery Current | Irr | IF=450A, VR=900V, VGE=-15V, diF/dt=-2800A/μs, Tvj=25 | 245 | A |
| Tvj=125 | 265 | A | ||
| Tvj=150 | 280 | A | ||
| Reverse Recovery Charge | Qrr | Tvj=25 | 60 | μC |
| Tvj=125 | 100 | μC | ||
| Tvj=150 | 120 | μC | ||
| Reverse Recovery Energy Loss | Erec | Tvj=25 | 40 | mJ |
| Tvj=125 | 60 | mJ | ||
| Tvj=150 | 70 | mJ | ||
| NTC-Thermistor | ||||
| Rated resistance | R25 | Tc=25 | 5.00 | KΩ |
| Power dissipation | P25 | 10 | mW | |
| B-value | B25/50 | R2=R25exp[B25/50(1/T2-1/(298,15K))] | 3380 | K |
| Package Properties | ||||
| IGBT Thermal Resistance: Junction to Case | Rth(J-C) | per IGBT | 0.060 | K/W |
| Diode Thermal Resistance: Junction to Case | Rth(J-C) | per Diode | 0.100 | K/W |
| IGBT Thermal Resistance: Case to Heatsink | Rth(C-H) | per IGBT, λgrease=1W/(m•K) | 0.029 | K/W |
| Diode Thermal Resistance: Case to Heatsink | Rth(C-H) | per Diode, λgrease=1W/(m•K) | 0.048 | K/W |
| Isolation Voltage | Visol | RMS, f=50Hz, t=60s | 3.4 | kV |
| Creepage Distance | dcr | Terminal to Heatsink | 14 | mm |
| Terminal to Terminal | 13.5 | mm | ||
| Clearance Distance | dcl | Terminal to Heatsink | 12.5 | mm |
| Terminal to Terminal | 10 | mm | ||
| Comparative Tracking Index | CTI | >200 | ||
| Module Stray Inductance | Ls | CE per Switch | 20 | nH |
| Module lead Resistance | RCC`+EE` | per Switch, TC=25 | 1.1 | mΩ |
| Mounting Torques | M | Baseplate to Heatsink, M5 | 3.0 - 6.0 | Nm |
| Power Terminal, M6 | 3.0 - 6.0 | Nm | ||
| Module Weight | G | 345 | g | |
2411121056_JSCJ-MCF450N170L2E3_C22392035.pdf
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