Power Control Triac JSCJ CT316B-800C 800V 16A Plastic Encapsulate Thyristors TO220BK Package Device
Key Attributes
Model Number:
CT316B-800C
Product Custom Attributes
Holding Current (Ih):
50mA
Current - Gate Trigger(Igt):
35mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
160A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
CT316B-800C
Package:
TO-220
Product Description
Product Overview
The CT316B series TRIACs are 5-layer structure devices designed for AC power control applications. They feature a glass-passivated mesa technology, high junction temperature capability, and good commutation performance, making them suitable for controlling heaters, mixers, and motor speeds. Available in 600V and 800V versions, these TRIACs offer high dV/dt and dI/dt ratings.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Material: Plastic-Encapsulate Thyristors
- Package Type: TO-220BK
Technical Specifications
| Part Number | VDRM/VRRM (V) | IT(RMS) (A) | VTM (V) | IGT (mA) | Test Condition | Storage Temp () | Operating Temp () |
| CT316B-600S/C/B | 600 | 16 | 1.55 | 10 (S), 35 (C), 50 (B) | ITM=23A, tp=380s | -40~+150 | -40~+125 |
| CT316B-800S/C/B | 800 | 16 | 1.55 | 10 (S), 35 (C), 50 (B) | ITM=23A, tp=380s | -40~+150 | -40~+125 |
| Symbol | Parameter | Value | Unit | Test Condition |
| ITSM | Non repetitive surge peak on-state current | 160 | A | Full sine wave, Tj(init)=25, tp=20ms |
| I2t | I2t value | 140 | A2s | tp=10ms |
| dIT/dt | Critical rate of rise of on-state current | 50 | A/s | IG=2*IGT, tr10ns, F=120HZ, Tj=125 |
| IGM | Peak gate current | 4 | A | tp=20s, Tj=125 |
| PG(AV) | Average gate power | 1 | W | Tj=125 |
| VGT | Gate trigger voltage | 1.3 | V | --, VD=12V, RL=33, Tj=25 |
| VGD | Non-triggering gate voltage | 0.2 | V | VD=VDRM, Tj=125 |
| IH | Holding current | 30 (-), 50 () | mA | IT=500mA, Fig. 6 |
| IL | Latching current | 50 (-), 70 () | mA | IT=500mA, Fig. 6 |
| dVD/dt | Critical rate of rise of off-state | 500 | V/s | VD=67%VDRM, Gate Open Tj=125 |
| IDRM/IRRM | Repetitive peak off- state current | 10 (Tj=25), 50 (Tj=125) | A | VD=VDRM/VRRM |
| Rth(j-c) | Junction to case (AC) | 1.2 | /W | |
| Rth(j-a) | Junction to ambient | 60 | /W |
2410121456_JSCJ-CT316B-800C_C527749.pdf
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