sensitive gate SCR JSCJ CS008G 30-60uA designed for triggering in pulse igniters and leakage protection circuits
Product Overview
The CS008G is a sensitive gate SCR (Silicon Controlled Rectifier) featuring a PNPN 4-layer structure with mesa glass passivation and multi-layer metal electrodes. Designed for applications requiring sensitive triggering, it is suitable for pulse igniters, logic circuit drivers, and leakage protectors.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CS008G
- Package Type: TO-92K
- Marking: CS008G (Part Number), XXX (Internal Code)
- Structure: PNPN 4-layer, Mesa Glass Passivated
- Electrodes: Multi Layers Metal
Technical Specifications
| Symbol | Parameter | Test Condition | Value | Unit | Notes |
| VDRM/VRRM | Repetitive peak off-state voltage | Tj=25 | 600 | V | |
| IT(RMS) | RMS on-state current | TO-92K(TC63), Fig. 1,2 | 0.8 | A | |
| IT(AV) | Average on-state current | TO-92K(TC63) | 0.5 | A | |
| ITSM | Non repetitive surge peak on-state current | Full sine wave, Tj(init)=25, tp=20ms; Fig. 3,5 | 8 | A | |
| I2t | I2t value | tp=10ms | 0.32 | A2s | |
| dIT/dt | Critical rate of rise of on-state current | IG=2*IGT, tr10ns, F=120HZ, Tj=110 | 50 | A/s | |
| IGM | Peak gate current | tp=20s, Tj=110 | 0.2 | A | |
| PG(AV) | Average gate power | Tj=110 | 0.1 | W | |
| TSTG | Storage temperature | -40~+150 | |||
| Tj | Operating junction temperature | -40~+110 | |||
| IGT | Gate trigger current | VD=12V, IT =10mA, Tj=25, Fig. 6 | Min 10, Nom 200, Max 200 | A | |
| VGT | Gate trigger voltage | VD=12V, IT =10mA, Tj=25 | Max 0.8 | V | |
| VGD | Non-triggering gate voltage | VD=VDRM, Tj=125 | Min 0.2 | V | |
| IH | Holding current | IG=0.5mA, RGK=1k, Tj=110 | Max 10 | mA | |
| IL | Latching current | Max 10 | mA | ||
| dVD/dt | Critical rate of rise of off-state | VD=67%VDRM, RGK=1k,Tj=110 | Max 100 | V/s | |
| VTM | On-state Voltage | ITM=1.2A, Fig. 4 | Max 1.5 | V | |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM, Tj=25 | Max 200 | A | |
| IDRM / IRRM | Repetitive peak off- state current | VD=VDRM/VRRM,Tj=110 | Max 3 | mA | |
| Rth (j-c) | Junction to case (AC) | 75 | /W | ||
| Rth (j-a) | Junction to ambient | 150 | /W |
2411121117_JSCJ-CS008G-30-60uA_C527811.pdf
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