Power control JSCJ CT312Q-800B thyristor with NPNPN 5 layer structure and plastic encapsulate package
Key Attributes
Model Number:
CT312Q-800B
Product Custom Attributes
Mfr. Part #:
CT312Q-800B
Package:
TO-263-2
Product Description
Product Overview
The CT312Q TRIACs are NPNPN 5-layer structure thyristors designed for various control applications. Featuring a multi-layer metal electrode construction and mesa glass passivated technology, these devices offer high junction temperature capability, high dV/dt and dI/dt, and good commutation performance. They are suitable for heater control, mixers, and motor speed controllers.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: TO-263K
- Material: Plastic-Encapsulate
Technical Specifications
| Part Number | VDRM/VRRM (V) | IT(RMS) (A) | ITSM (A) | I2t (A2s) | dIT/dt (A/s) | IGM (A) | PG(AV) (W) | TSTG () | Tj () | IGT (mA) | VGT (V) | VGD (V) | IH (mA) | IL (mA) | dVD/dt (V/s) | VTM (V) | IDRM/IRRM (A) | Rth(j-c) (/W) | Rth(j-a) (/W) |
| CT312Q-600S/C/B | 600 | 12 | 120 | 78 | 50 | 4 | 1 | -40~+150 | -40~+125 | 10 (S) / 35 (C) / 50 (B) | 1.3 | 0.2 | 5 | 5 | 15 | 1.55 | 1 (Tj=25) / 5 (Tj=125) | 1.4 | 45 |
| CT312Q-800S/C/B | 800 | 12 | 120 | 78 | 50 | 4 | 1 | -40~+150 | -40~+125 | 10 (S) / 35 (C) / 50 (B) | 1.3 | 0.2 | 5 | 5 | 15 | 1.55 | 1 (Tj=25) / 5 (Tj=125) | 1.4 | 45 |
2411121117_JSCJ-CT312Q-800B_C527797.pdf
Related Products
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
