NPN Silicon Epitaxial Planar Transistor JSMSEMI SS8050 with 1.5A Collector Current in SOT23 Package
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
190MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description
Product Overview
The SS8050 is an NPN Silicon Epitaxial Planar Transistor designed for high collector current applications. It offers a continuous collector current of up to 1.5A and a collector dissipation of 300mW at 25. Its complementary type is the SS8550. The transistor is supplied in a SOT-23 package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Epitaxial Planar
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATING | ||||||
| Collector-Base Voltage | VCBO | @ Ta=25 | 40 | V | ||
| Collector-Emitter Voltage | VCEO | @ Ta=25 | 25 | V | ||
| Emitter-Base Voltage | VEBO | @ Ta=25 | 6 | V | ||
| Collector Current -Continuous | IC | @ Ta=25 | 1.5 | A | ||
| Collector Dissipation | PC | @ Ta=25 | 300 | mW | ||
| Junction and Storage Temperature | Tj,Tstg | @ Ta=25 | -55 | +150 | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=2mA,IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=35V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V,IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=6V,IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=1V,IC=100mA | 120 | 400 | ||
| DC current gain | hFE | VCE=1V,IC=800mA | 40 | 110 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=800 mA, IB= 80mA | 0.28 | 0.5 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=800 mA, IB= 80mA | 0.98 | 1.2 | V | |
| Base-emitter voltage | VBE | VCE=1V, IC=10mA | 0.66 | 1 | V | |
| Output capacitance | Cob | VCB=10V, IE=0 f=1MHz | 9.0 | pF | ||
| Transition frequency | fT | VCE=10V, IC= 50mA | 100 | 190 | MHz | |
hFE Classification
| Rank | Range |
|---|---|
| L | 120-200 |
| H | 200-350 |
| J | 300-400 |
Package Information
| Package | Dimensions (mm) | Shipping |
|---|---|---|
| SOT-23 | A: 2.70-3.10, B: 1.10-1.50, C: 0.90-1.10, D: 0.30-0.50, E: 0.35-0.48, G: 1.80-2.00, H: 0.02-0.10, J: 0.05-0.15, K: 2.20-2.60 | 3000pcs / Tape & Reel |
2308071512_JSMSEMI-SS8050_C916392.pdf
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