Power Transistor JSMSEMI TIP2955 Silicon PNP Type TO247 Package Suitable for Switching and Amplifier
Key Attributes
Model Number:
TIP2955
Product Custom Attributes
Current - Collector Cutoff:
700uA
Emitter-Base Voltage(Vebo):
7V
Pd - Power Dissipation:
90W
Transition Frequency(fT):
2.5MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
15A
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
TIP2955
Package:
TO-247
Product Description
Product Overview
The JSMICRO TIP2955 is a silicon PNP power transistor designed for general-purpose switching and amplifier applications. It features a TO-247 package and is a complement to the TIP3055. This transistor can handle 90 W at a 25C case temperature and a continuous collector current of 15 A.
Product Attributes
- Brand: JSMICRO
- Material: Silicon
- Package: TO-247
- Complementary Type: TIP3055
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ. | Max | Unit |
| VCEO(SUS) | Collector-emitter sustaining voltage | IC=-30mA ;IB=0 | -60 | V | ||
| VCBO | Collector-base voltage | Open emitter | -100 | V | ||
| VCEO | Collector-emitter voltage | Open base | -60 | V | ||
| VEBO | Emitter-base voltage | Open collector | -7 | V | ||
| IC | Collector current | -15 | A | |||
| IB | Base current | -7 | A | |||
| PC | Collector power dissipation | TC=25 | 90 | W | ||
| Tj | Junction temperature | 150 | ||||
| Tstg | Storage temperature | -65 | 150 | |||
| Rth j-c | Thermal resistance junction to case | 1.39 | /W | |||
| VCEsat-1 | Collector-emitter saturation voltage | IC=-4A ;IB=-0.4A | -1.1 | V | ||
| VCEsat-2 | Collector-emitter saturation voltage | IC=-10A ;IB=-3.3A | -3.0 | V | ||
| VBE | Base-emitter on voltage | IC=-4A ; VCE=-4V | -1.5 | V | ||
| ICEO | Collector cut-off current | VCE=-30V; IB=0 | -0.7 | mA | ||
| ICER | Collector cut-off current | VCE=-70Vdc;RBE=100Ohm | -1.0 | mA | ||
| ICEV | Collector cut-off current | VCE=-100Vdc,VBE(off)=-1.5Vdc | -5.0 | mA | ||
| IEBO | Emitter cut-off current | VEB=-7V; IC=0 | -5.0 | mA | ||
| hFE-1 | DC current gain | IC=-4A ; VCE=-4V | 20 | 70 | ||
| hFE-2 | DC current gain | IC=-10A ; VCE=-4V | 5.0 | |||
| Is/b | Second breakdown collector current | With base forward biased VCE=-30Vdc,t=1.0s, Nonrepetitive | 3.0 | A | ||
| fT | Transition frequency | IC=-0.5A ; VCE=-10V | 2.5 | MHz |
Fig.1 simplified outline (TO-247) and symbol
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
| Dim | Min | Max |
| A | 20.0 | 22.0 |
| B | 15.5 | 16.0 |
| C | 5.7 | 6.3 |
| D | 4.0 | 4.4 |
| E | 19.0 | 21.0 |
| F | 1.1 | 1.3 |
| G | 3.5 | 3.8 |
| H | 18.3 | 20.2 |
| I | 4.9 | 5.2 |
| J | 2.3 | 2.5 |
| K | 0.55 | 0.65 |
| L | 39.0 | 42.0 |
| P | 10.7 | 10.9 |
| F1 | 1.9 | 2.1 |
| F2 | 2.9 | 3.1 |
mm
2401051654_JSMSEMI-TIP2955_C2900598.pdf
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