High voltage low leakage transistor JSMSEMI 2SA1943-O-JSM for performance in low frequency amplification

Product Overview

The 2SA1943/2SC5200 are semiconductor discrete devices designed for low-frequency amplification. They offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits.

Product Attributes

• Brand: JSMICRO Semiconductor
• Origin: Not specified
• Material: Semiconductor
• Color: Not specified
• Certifications: Not specified

Technical Specifications

Applications

• General amplification circuit
• Audio power amplifier
• Power supply circuit adjustment
• Other electronic circuits

Notes

• When designing applications, ensure the device operates within the safe area and does not exceed the maximum limit values to maintain system reliability.
• Avoid overcurrent, overvoltage, and overheating during use; implement appropriate protection measures.
• Install the device flat on a heatsink, minimize mounting hole size, apply thermal grease evenly on the mounting surface, and verify heatsink thickness and area for effective heat dissipation.
• Minimize mechanical stress during installation. Use electric screwdrivers with a torque not exceeding 7KGcm to prevent product failure.
• Soldering conditions: 260 not exceeding 8 seconds, 350 not exceeding 2.5 seconds, at least 1.5mm away from the device body. Complete soldering in the shortest possible time.
• Use products as soon as possible after receiving them. Recommended storage conditions: temperature +5~+35, humidity 40%~75%. Avoid high temperature, high humidity, drastic temperature/humidity changes, dusty environments, harmful gases, radiation, and direct sunlight. Recommended usage within three months.
• Perform quality inspection upon use. Report any issues within three days for a solution within 24 hours.
• Specification versions may change without prior notice.