fast switching NPN transistor JSMSEMI BU406 JSM ideal for various electronic circuit power management

Key Attributes
Model Number: BU406-JSM
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
60W
Transition Frequency(fT):
10MHz
Type:
NPN
Current - Collector(Ic):
7A
Collector - Emitter Voltage VCEO:
200V
Mfr. Part #:
BU406-JSM
Package:
TO-220-3
Product Description

Product Overview

The BU406 is a high voltage, fast-switching NPN power transistor designed for general-purpose applications. It features low saturation voltage and Pb-free packaging options, making it suitable for various electronic circuits requiring efficient power handling and rapid switching capabilities.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Model: BU406
  • Package Type: TO-220-3L
  • Certifications: PbFree Packages Available

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC=100uA, IE=0400V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=100mA,IB=0200V
Emitter-Base Breakdown VoltageV(BR)EBOIE=100uA,IC=06V
Collector Cut-off CurrentICESVCB=400V,IE=05mA
Collector Cut-off CurrentICESVCB=250V,IE=01mA
Collector Cut-off CurrentICBOVCB=300V,IE=05A
Emitter Cut-off CurrentIEBOVEB=6V,IC=01mA
DC Current GainhFEVCE=5V, IC=1A50100
Collector-Emitter Saturation VoltageVCE(sat)IC=5A,IB=500mA1V
Base-Emitter Saturation VoltageVBE(sat)IC=5A,IB=500mA1.2V
Collector Output CapacitanceCobVCB=10V,IE=0, f=1MHz80pF
Transition FrequencyfTVCE=5V,IC=0.2A,f=10MHz10MHz
Collector-Base VoltageVCBO400V
Collector-Emitter VoltageVCEO200V
Emitter-Base VoltageVEBO6V
Collector CurrentIC7A
Collector Power DissipationPC60W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2409291234_JSMSEMI-BU406-JSM_C7498974.pdf

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