Medium power PNP transistor JSMSEMI MMBT4403 silicon epitaxial planar type for general electronic

Name: Medium power PNP transistor JSMSEMI MMBT4403 silicon epitaxial planar type for general electronic
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: MMBT4403
Availability: InStock

Key Attributes

Model Number: MMBT4403

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

300mW

Transition Frequency(fT):

200MHz

Type:

PNP

Current - Collector(Ic):

600mA

Collector - Emitter Voltage VCEO:

40V

Operating Temperature:

-55℃~+150℃@(Tj)

Mfr. Part #:

MMBT4403

Package:

SOT-23

Product Description

MMBT4403 PNP Silicon Epitaxial Planar Transistor

The MMBT4403 is a PNP Silicon Epitaxial Planar Transistor designed for general-purpose applications in desktop and handheld systems. It is ideal for medium-power signal amplification and switching. The device features epitaxial planar die construction and has a complementary NPN product available (MMBT4401). It is MSL Class 1 compatible.

Product Attributes

Brand: JSMICRO Semiconductor
Material: Silicon
Package: SOT-23
Complementary NPN Product: MMBT4401

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Breakdown Voltage	V(BR)CBO	IC = -100A, IE = 0	-40			V
	V(BR)CEO	IC = -1mA, IB = 0	-40			V
	V(BR)EBO	IE = -100A, IC = 0	-5			V
Cut-off Current	ICBO	VCB = -35V, IE = 0			-0.1	A
Cut-off Current	ICEX	VCE = -35V, VBE = -0.4V			-0.10	A
Base Cut-off Current	IBL	VCE = -35V, VBE = -0.4V			-0.10	A
DC Current Gain	hFE	VCE = -1V, IC = -0.1mA	30
		VCE = -1V, IC = -1.0mA	60
		VCE = -1V, IC = -10mA	100
		VCE = -2V, IC = -150mA	100
		VCE = -2V, IC = -500mA	20		300
Saturation Voltage	VCE(sat)	IC = -150mA, IB = -15mA		-0.40		V
Saturation Voltage		IC = -500mA, IB = -50mA		-0.75		V
Base-Emitter Saturation Voltage	VBE(sat)	IC = -150mA, IB = -15mA		-0.75		V
Base-Emitter Saturation Voltage		IC = -500mA, IB = -50mA		-0.95	-1.30	V
Transition Frequency	fT	VCE = -10V, IC = -20mA, f = 100MHz		200		MHz

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	-40	V
Collector-Emitter Voltage	VCEO	-40	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current (Continuous)	IC	-0.6	A
Collector Current (Peak)	ICM	-1.2	A
Power Dissipation (Collector)	PC	350	mW
Thermal Resistance (Junction-to-Ambient)	RJA	357	C/W
Thermal Resistance (Junction-to-Case)	RJC	250	C/W
Junction Temperature	TJ	150	C
Storage Temperature Range	TSTG	-55 ~ +150	C

Package Outline

SOT-23

Package Information

Package	Dimension	Min.	Max.
SOT-23	A	2.70	3.10
	B	1.10	1.50
	C	0.90	1.10
	D	0.30	0.50
	E	0.35	0.48
	G	1.80	2.00
	H	0.02	0.10
	J	0.05	0.15
	K	2.20	2.60

Shipping Information

Part Number	Package	Shipping Quantity
MMBT4403	SOT-23	3000pcs / Tape & Reel

2306301522_JSMSEMI-MMBT4403_C916377.pdf

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Medium power PNP transistor JSMSEMI MMBT4403 silicon epitaxial planar type for general electronic