Plastic Encapsulated PNP Transistor Model JSMSEMI 2SB647A for Electronic Circuit Power Amplification
Key Attributes
Model Number:
2SB647A
Product Custom Attributes
Current - Collector Cutoff:
10uA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
750mW
Transition Frequency(fT):
140MHz
Type:
PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SB647A
Package:
TO-92L
Product Description
Product Overview
The 2SB647A is a plastic-encapsulated PNP transistor designed for low-frequency power amplifier applications. It is a complementary pair with the 2SD667, offering reliable performance for various electronic circuits.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Plastic-Encapsulated Transistors
- Color: Solid dot = Green molding compound device, if none, the normal device
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A,IE=0 | -120 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -80 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-100V,IE=0 | -10 | A | ||
| DC current gain | hFE(1) | VCE=-5V, IC=-150mA | 60 | 320 | ||
| DC current gain | hFE(2) | VCE=-5V, IC=-500mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA,IB=-50mA | -1 | V | ||
| Base-emitter voltage | VBE | VCE=-5V, IC=-150mA | -1.5 | V | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0, f=1MHz | 20 | pF | ||
| Transition frequency | fT | VCE=-5V,IC=-150mA | 140 | MHz | ||
| Collector Power Dissipation | PC | Ta=25 | 750 | mW | ||
| Thermal Resistance From Junction To Ambient | RJA | 167 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 |
2401051657_JSMSEMI-2SB647A_C5356106.pdf
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