General Purpose Amplification Transistor JSMSEMI 2SC1623 Silicon Epitaxial Planar NPN Type for Audio
Key Attributes
Model Number:
2SC1623
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
2SC1623
Package:
SOT-23
Product Description
Product Overview
The 2SC1623 is an NPN Silicon Epitaxial Planar Transistor designed for audio frequency general-purpose amplification. It features high DC current gain (hFE=200 TYP) and a high voltage rating of VCEO=50V, making it suitable for various amplifier applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Epitaxial Planar
- Package Type: SOT-23
- Moisture Sensitivity Level (MSL): 1
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | Units |
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=60V,IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=6V,IC=1mA | 90 | 200 | 600 | |
| Collector-emitter saturation voltage | VCE(sat) | IC=100mA, IB=10mA | 0.15 | 0.3 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=100mA, IB=10mA | 0.86 | 1.0 | V | |
| Base Emitter Voltage | VBE | VCE=6V, IC=1mA | 0.55 | 0.62 | 0.65 | V |
| Transition frequency | fT | VCE=6V, IE= -10mA | 250 | MHz | ||
| Output capacitance | Cob | VCB=6V, IE= 0,f=1.0MHz | 3.0 | pF |
hFE Classification
| Rank | Range | Marking |
| L4 | 90-180 | L4 |
| L5 | 135-270 | L5 |
| L6 | 200-400 | L6 |
| L7 | 300-600 | L7 |
Maximum Ratings
| Parameter | Symbol | Value | Units |
| Collector-Base Voltage | VCBO | 60 | V |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current -Continuous | IC | 100 | mA |
| Collector Dissipation | PC | 200 | mW |
| Junction and Storage Temperature | TJ, TSTG | -55 to +150 |
Package Outline (SOT-23)
| Dim | Min | Max |
| A | 2.70 | 3.10 |
| B | 1.10 | 1.50 |
| C | 0.90 | 1.10 |
| D | 0.30 | 0.50 |
| E | 0.35 | 0.48 |
| G | 1.80 | 2.00 |
| H | 0.02 | 0.10 |
| J | 0.05 | 0.15 |
| K | 2.20 | 2.60 |
2308071512_JSMSEMI-2SC1623_C916388.pdf
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