JSMSEMI MJ15023G JSM Power Transistor TO3 Package Ideal for High Current Gain and Audio Applications
Key Attributes
Model Number:
MJ15023G-JSM
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500uA
Pd - Power Dissipation:
250W
Transition Frequency(fT):
4MHz
Type:
PNP
Current - Collector(Ic):
16A
Collector - Emitter Voltage VCEO:
200V
Operating Temperature:
-
Mfr. Part #:
MJ15023G-JSM
Package:
TO-3
Product Description
Product Overview
The MJ15023G to MJ15025G series are PNP power transistors housed in a TO-3 package. They are complements to the MJ15022G, MJ15024G types and offer an excellent safe operating area and high DC current gain. These transistors are designed for high power audio, disk head positioners, and other linear applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: TO-3
Technical Specifications
| Parameter | Conditions | MJ15023G | MJ15025G | Unit | Min | Typ. | Max |
| VCBO Collector-base voltage | Open emitter | -350 | -400 | V | |||
| Open emitter | V | ||||||
| VCEO Collector-emitter voltage | Open base | -200 | -250 | V | |||
| Open base | V | ||||||
| VEBO Emitter-base voltage | Open collector | V | -5 | ||||
| IC Collector current | -16 | A | |||||
| ICM Collector current-peak | -30 | A | |||||
| IB Base current | -5 | A | |||||
| PD Total power dissipation | TC=25 | 250 | W | ||||
| Tj Junction temperature | 150 | ||||||
| Tstg Storage temperature | -65~200 | ||||||
| Rth j-c Thermal resistance junction to case | 0.70 | /W | |||||
| VCEO(SUS) Collector-emitter sustaining voltage | IC=0.1A ;IB =0 | -200 | V | ||||
| IC=0.1A ;IB =0 | -250 | V | |||||
| VCEsat-1 Collector-emitter saturation voltage | IC=8A; IB=0.8A | -1.4 | V | ||||
| VCEsat-2 Collector-emitter saturation voltage | IC=16A; IB=3.2A | -4.0 | V | ||||
| VBE Base-emitter on voltage | IC=8A ; VCE=4V | -2.2 | V | ||||
| ICEO Collector cut-off current | VCE=150V; IB =0 | -0.5 | mA | ||||
| VCE=200V; IB =0 | -0.5 | mA | |||||
| ICEX Collector cut-off current | VCE=200V; VBE(off) =1.5V | -0.25 | mA | ||||
| VCE=250V; VBE(off) =1.5V | -0.25 | mA | |||||
| IEBO Emitter cut-off current | VEB=5V; IC=0 | -0.5 | mA | ||||
| hFE-1 DC current gain | IC=8A ; VCE=4V | 15 | 15 | 60 | |||
| IC=8A ; VCE=4V | 15 | ||||||
| hFE-2 DC current gain | IC=16A ; VCE=4V | 5 | 5 | ||||
| Second breakdown collector current | VCE=50Vdc,t=0.5 s,Nonrepetitive | -5.0 | A | ||||
| Second breakdown collector current | VCE=80Vdc,t=0.5 s,Nonrepetitive | -2.0 | A | ||||
| COB Output capacitance | IE=0 ; VCB=10V;f=1.0MHz | 500 | pF | ||||
| fT Transition frequency | IC=1A ; VCE=10V;f=1.0MHz | 4 | MHz |
2401121850_JSMSEMI-MJ15023G-JSM_C20606853.pdf
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