General Purpose NPN Transistor JSMSEMI S9018 Featuring 200mW Power Dissipation and Amplification
Product Overview
The S9018 is an NPN epitaxial silicon transistor designed for general-purpose applications. It features a high current gain bandwidth product and a power dissipation of 200mW. This transistor is suitable for various electronic circuits requiring amplification and switching capabilities.
Product Attributes
- Brand: JSMICRO Semiconductor
- Material: Silicon Epitaxial Planar
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VCBO | Collector-Base Voltage | 25 | V | |||
| VCEO | Collector-Emitter Voltage | 18 | V | |||
| VEBO | Emitter-Base Voltage | 4 | V | |||
| IC | Collector Current -Continuous | 50 | mA | |||
| PC | Collector Dissipation | @ Ta=25 | 200 | mW | ||
| Tj,Tstg | Junction and Storage Temperature | -55 | 150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=100A,IE=0 | 25 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=0.1mA,IB=0 | 18 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-100A,IC=0 | 4 | V | ||
| ICBO | Collector cut-off current | VCB=20V,IE=0 | 0.1 | A | ||
| ICEO | Collector cut-off current | VCE=15V,IB=0 | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB=3V,IC=0 | 0.1 | A | ||
| hFE | DC current gain | VCE=5V,IC=1mA | 70 | 190 | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=10 mA, IB= 1mA | 0.5 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=10 mA, IB= 1mA | 1.4 | V | ||
| fT | Transition frequency | VCE=5V, IC= 5mA, f=400MHz | 600 | MHz |
Package Outline
SOT-23
| Dim | Min | Max |
| A | 2.85 | 2.95 |
| B | 1.25 | 1.35 |
| C | 1.0 | |
| D | 0.37 | 0.43 |
| E | 0.35 | 0.48 |
| G | 1.85 | 1.95 |
| H | 0.02 | 0.1 |
| J | 0.1 | |
| K | 2.35 | 2.45 |
All Dimensions in mm
Ordering Information
| Type No. | Marking | Package Code | Shipping |
| S9018 | J8 | SOT-23 | 3000/Tape&Reel |
2306301522_JSMSEMI-S9018_C916368.pdf
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