Medium power silicon planar NPN transistor JSMSEMI FMMT493 designed for general purpose electronics
Key Attributes
Model Number:
FMMT493
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT493
Package:
SOT-23
Product Description
Product Overview
The FMMT493 is an NPN silicon planar medium power transistor designed for general-purpose applications. It offers complementary pairing with the FMMT593.
Product Attributes
- Brand: JSMICRO Semiconductor
- Marking: 493
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 120 | V | |||
| Collector-Emitter Voltage | VCEO | 100 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 1000 | mA | |||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 250 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 500 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 120 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA, IB=0 | 100 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=100V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICES | VCES=100V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=4V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=10V, IC=1mA | 100 | |||
| DC current gain | hFE(2) | VCE=10V, IC=250mA | 100 | 300 | ||
| DC current gain | hFE(3) | VCE=10V, IC=0.5A | 60 | |||
| DC current gain | hFE(4) | VCE=10V, IC=1A | 20 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=500mA, IB=50mA | 0.3 | V | ||
| Collector-emitter saturation voltage | VCE(sat)2 | IC=1A, IB=100mA | 0.6 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=1A, IB=100mA | 1.15 | V | ||
| Base-emitter voltage | VBE | VCE=10V, IC=1A | 1 | V | ||
| Transition frequency | fT | VCE=10V,IC=50mA, f=100MHz | 150 | MHz | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 10 | pF |
2401051657_JSMSEMI-FMMT493_C5296728.pdf
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