86--136 6733 2386
quality MiniMELF LL34 Case Silicon Epitaxial Planar Zener Diodes JSMSEMI ZMM30V with Forward Voltage One Volt factory
quality MiniMELF LL34 Case Silicon Epitaxial Planar Zener Diodes JSMSEMI ZMM30V with Forward Voltage One Volt factory

MiniMELF LL34 Case Silicon Epitaxial Planar Zener Diodes JSMSEMI ZMM30V with Forward Voltage One Volt

Key Attributes
Model Number: ZMM30V
Product Custom Attributes
Impedance(Zzt):
80Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
500mW
Zener Voltage(Range):
28V~32V
Zener Voltage(Nom):
30V
Mfr. Part #:
ZMM30V
Package:
LL-34
Product Description

Product Overview

Silicon Epitaxial Planar Zener Diodes in a MiniMELF case (LL-34) designed for automatic insertion. These diodes are also available in a DO-35 case.

Product Attributes

  • Brand: JSM (implied by www.jsmsemi.com)
  • Material: Silicon Epitaxial Planar
  • Case: LL-34 (MiniMELF), DO-35

Technical Specifications

ParameterSymbolValueUnitNotes
Maximum Ratings
Power DissipationPtot500mW1) Valid provided that electrodes are kept at ambient temperature.
Junction TemperatureTj175OC
Storage Temperature RangeTstg-55 to +175OC
Characteristics at Ta = 25 OC
Thermal Resistance Junction to Ambient AirRJA0.3K/mW1) Valid provided that electrodes are kept at ambient temperature.
Forward Voltage at IF = 100 mAVF1V1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics @ TA = 25C unless otherwise specified
Notes: 1. Tested with pulses tp = 20 ms. 2. Valid provided that electrodes are kept at ambient temperature.
SeriesTest Current (Iz)Zener Voltage (Vz)Max. UnitNotes
ZMM... / ZMM15mASee GraphsVTj=25oC, Tj = constant (pulsed)
ZMM... / ZMM105mASee GraphsVTj=25oC, Tj = constant (pulsed)
ZMM... / ZMM365mASee GraphsVTj=25oC, Tj = constant (pulsed)
ZMM...See GraphsSee GraphsVForward characteristics, Tj=100oC, Tj=25oC
ZMM...See GraphsSee GraphsmWAdmissible power dissipation versus ambient temperature
ZMM...See GraphsSee GraphsK/WPulse thermal resistance versus pulse duration
ZMM...See GraphsSee GraphspFCapacitance versus Zener voltage, Tj=25 C, VR=1V, VR=2V
ZMM...See GraphsSee GraphsSDynamic resistance versus Zener current, Tj=25 C
ZMM...See GraphsSee GraphsOhmDynamic resistance versus Zener current, Tj=25oC
ZMM...See GraphsSee GraphsV/KThermal differential resistance versus Zener voltage
ZMM...See GraphsSee GraphsOhmDynamic resistance versus Zener voltage, Tj=25 C, Iz=5 mA
ZMM...See GraphsSee GraphsmV/KTemperature dependence of Zener voltage versus Zener voltage
ZMM...See GraphsSee GraphsmADynamic resistance versus Zener current, Tj=25oC
ZMM...See GraphsSee GraphsVChange of Zener voltage versus junction temperature
ZMM...See GraphsSee GraphsVChange of Zener voltage from turn-on up to the point of thermal equilibrium versus Zener voltage
ZMM...See GraphsSee GraphsmV/KTemperature dependence of Zener voltage versus Zener voltage

2401051652_JSMSEMI-ZMM30V_C2857247.pdf

Related Products
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
quality Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.