Surface Mount P Channel MOSFET JSMSEMI AO4407 for Battery Switch and Load Switch Power Applications

Key Attributes
Model Number: AO4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
20mΩ@4.5V,6A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.75nF@15V
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
24nC@15V
Mfr. Part #:
AO4407
Package:
SOP-8
Product Description

Product Overview

The AO4407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This MOSFET is designed for high power and current handling capabilities, making it suitable for applications such as battery switches, load switches, and power management. It is a lead-free product and comes in a surface mount package.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Product Type: P-Channel Enhancement Mode Power MOSFET
  • Certifications: Lead free product is acquired

Technical Specifications

ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250A-30--V
Zero Gate Voltage Drain CurrentIDSSVDS=-30V,VGS=0V---1A
Gate-Body Leakage CurrentIGSSVGS=20V,VDS=0V--100nA
Gate Threshold VoltageVGS(th)VDS=VGS,ID=-250A-1--V
Drain-Source On-State ResistanceRDS(ON)VGS=-10V, ID=-10.0A-914m
VGS=-4.5V, ID=-6.0A-1420m
Forward TransconductancegFSVDS=-15V,ID=-5.0A-20-S
Input CapacitanceClssVDS=-15V,VGS=0V, F=1.0MHz-1750-PF
Output CapacitanceCoss-215-PF
Reverse Transfer CapacitanceCrss-180-PF
Turn-on Delay Timetd(on)VDD=-15V, ID=-10A, VGS=-10V,RGEN=1-9-nS
Turn-on Rise Timetr-8-nS
Turn-Off Delay Timetd(off)-28-nS
Turn-Off Fall Timetf-10-nS
Total Gate ChargeQgVDS=-15V,ID=-10.0A, VGS=-10V-24-nC
Gate-Source ChargeQgs--3.5-nC
Gate-Drain ChargeQg--6-nC
Diode Forward VoltageVSDVGS=0V,IS=-10A---1.2V
Continuous Drain CurrentIDTA=25 (TJ =150)--60-A
Drain Current-PulsedIDM----A
Maximum Power DissipationPD---2.1W
Operating Junction and Storage Temperature RangeTJ,TSTG--55-150
Thermal Resistance,Junction-to-AmbientRJASurface Mounted on FR4 Board, t 10 sec.-50-/W

2401050928_JSMSEMI-AO4407_C5155210.pdf

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