Surface Mount P Channel MOSFET JSMSEMI AO4407 for Battery Switch and Load Switch Power Applications
Product Overview
The AO4407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This MOSFET is designed for high power and current handling capabilities, making it suitable for applications such as battery switches, load switches, and power management. It is a lead-free product and comes in a surface mount package.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Type: P-Channel Enhancement Mode Power MOSFET
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V,VGS=0V | - | - | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1 | - | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-10.0A | - | 9 | 14 | m |
| VGS=-4.5V, ID=-6.0A | - | 14 | 20 | m | ||
| Forward Transconductance | gFS | VDS=-15V,ID=-5.0A | - | 20 | - | S |
| Input Capacitance | Clss | VDS=-15V,VGS=0V, F=1.0MHz | - | 1750 | - | PF |
| Output Capacitance | Coss | - | 215 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | PF | |
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-10A, VGS=-10V,RGEN=1 | - | 9 | - | nS |
| Turn-on Rise Time | tr | - | 8 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 28 | - | nS | |
| Turn-Off Fall Time | tf | - | 10 | - | nS | |
| Total Gate Charge | Qg | VDS=-15V,ID=-10.0A, VGS=-10V | - | 24 | - | nC |
| Gate-Source Charge | Qgs | - | - | 3.5 | - | nC |
| Gate-Drain Charge | Qg | - | - | 6 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=-10A | - | - | -1.2 | V |
| Continuous Drain Current | ID | TA=25 (TJ =150) | - | -60 | - | A |
| Drain Current-Pulsed | IDM | - | - | - | - | A |
| Maximum Power Dissipation | PD | - | - | - | 2.1 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | |
| Thermal Resistance,Junction-to-Ambient | RJA | Surface Mounted on FR4 Board, t 10 sec. | - | 50 | - | /W |
2401050928_JSMSEMI-AO4407_C5155210.pdf
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