High current N Channel MOSFET transistor JSMSEMI IRF3205S JSM with fast switching speed and operation
Key Attributes
Model Number:
IRF3205S-JSM
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
200W
Mfr. Part #:
IRF3205S-JSM
Package:
TO-263
Product Description
Product Overview
The IRF3205S is an N-Channel MOSFET transistor designed for high current, high-speed switching applications. It offers fast switching speeds and minimum lot-to-lot variations for robust device performance and reliable operation. Ideal for switch mode power supplies.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: IRF3205S
Technical Specifications
| Parameter | Symbol | Conditions | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | VGS=0 | 55 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-continuous | ID | TC=25 | 110 | A | ||
| Pulse Drain Current | IDM | 390 | A | |||
| Total Dissipation | Ptot | TC=25 | 200 | W | ||
| Max. Operating Junction Temperature | Tj Max. | 175 | ||||
| Storage Temperature Range | Tstg | -55~175 | ||||
| Thermal Resistance, Junction to Case | Rth j-c | 0.75 | /W | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS= 0; ID= 250µA | 55 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS; ID=250µA | 2.0 | 4.0 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS= 10V; ID=62A | 8 | mΩ | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V;VDS= 0 | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=55V; VGS= 0 | 25 | µA | ||
| Diode Forward On-Voltage | VSD | IS=62A ;VGS= 0 | 1.3 | V |
2409302232_JSMSEMI-IRF3205S-JSM_C2874633.pdf
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