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quality N Channel MOSFET featuring low gate charge and trench technology JSMSEMI JSM80N03D ideal for power management factory
quality N Channel MOSFET featuring low gate charge and trench technology JSMSEMI JSM80N03D ideal for power management factory

N Channel MOSFET featuring low gate charge and trench technology JSMSEMI JSM80N03D ideal for power management

Key Attributes
Model Number: JSM80N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@10V;7.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
215pF
Input Capacitance(Ciss):
1.614nF
Output Capacitance(Coss):
245pF
Pd - Power Dissipation:
46W
Gate Charge(Qg):
33.7nC@10V
Mfr. Part #:
JSM80N03D
Package:
TO-252
Product Description

Product Description

This N-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, offering advantages such as low gate charge, advanced high cell density trench technology for ultra-low RDS(ON), and an excellent package design for efficient heat dissipation. This device is also available as a green product.

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Product Name: JSM80N03D
  • Type: N-Channel MOSFET
  • Availability: Green device available

Technical Specifications

SymbolParameterConditionsMinTypMaxUnits
Absolute Maximum RatingsVDS Drain-Source Voltage30V
VGS Gate-Source Voltage±20V
ID Continuous Drain Current-TC=2580A
ID Continuous Drain Current-TC=10046A
ID Pulsed Drain Current280A
EAS Single Pulse Avalanche Energy256mJ
Thermal CharacteristicsPD Power Dissipation,TC=2546W
TJ, TSTG Operating and Storage Junction Temperature Range-55+150
RJC Thermal Resistance,Junction to Case2.72/W
Off CharacteristicsBVDSS Drain-Sourtce Breakdown VoltageVGS=0V,ID=250A30------V
IDSS Zero Gate Voltage Drain CurrentVGS=0V, VDS=30V------1A
IGSS Gate-Source Leakage CurrentVGS=±20V, VDS =0A---±100nA
VGS(th) GATE-Source Threshold VoltageVGS=VDS, ID=250A11.52.5V
On CharacteristicsRDS(ON) Drain-Source On ResistanceVGS=10V,ID=30A---4.86m
RDS(ON) Drain-Source On ResistanceVGS=4.5V,ID=20A---7.512m
VSD Source-Drain Diode Forward VoltageVGS=0V,IS=30A------1.2V
Dynamic CharacteristicsCiss Input CapacitanceVDS=15V, VGS=0V, f=1MHz---1614---pF
Coss Output Capacitance---245---pF
Crss Reverse Transfer Capacitance---215---pF
Switching Characteristicstd(on) Turn-On Delay TimeVDD=15V, ID=30A, VGS=10V,RGEN=3---7.5---ns
tr Rise Time---14.5---ns
td(off) Turn-Off Delay Time---35.2---ns
tf Fall Time---9.6---ns
Gate ChargeQg Total Gate ChargeVGS=10V, VDS=15V, ID=30A---33.7---nC
Qgs Gate-Source Charge---8.5---nC
Qgd Gate-Drain Miller Charge---7.5---nC
Diode CharacteristicsIs Continuous Source Current------70A
Ism Pulsed Source Current-----280A

2412091608_JSMSEMI-JSM80N03D_C22447118.pdf

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