High Current P Channel MOSFET JSMSEMI AOD407 with Low Gate Charge and Enhanced Thermal Performance
Key Attributes
Model Number:
AOD407
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
68mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.44nF@15V
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
9.86nC@4.5V
Mfr. Part #:
AOD407
Package:
TO-252
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design, offering excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, providing efficient performance and good heat dissipation.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: AOD407
- Type: P-Channel MOSFET
- Certifications: Green device available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current-TC=25 | ID | -20 | A | |||
| Continuous Drain Current-TC=100 | ID | -11 | A | |||
| Pulsed Drain Current | IDM | -36 | A | |||
| Single Pulse Avalanche Energy | EAS | 35.4 | mJ | |||
| Avalanche Current | IAS | -26.6 | A | |||
| Total Power Dissipation-TC=25 | PD | 34.7 | W | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250A | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-48V,TJ=25 | -1 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-48V,TJ=55 | -5 | μA | ||
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0A | ±100 | nA | ||
| Gate-Source Threshold Voltage | VGS(th) | VGS=VDS, ID=250μA | -1.2 | -2.5 | V | |
| Drain-Source On Resistance | RDS(ON) | VGS=-10V,ID=-12A | 68 | mΩ | ||
| Drain-Source On Resistance | RDS(ON) | VGS=-4.5V,ID=-8A | 105 | mΩ | ||
| Forward Transconductance | GFS | VDS=-5V , ID=-12A | 15.4 | S | ||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 1440 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 97 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 65 | pF | ||
| Turn-On Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 28.8 | ns | ||
| Rise Time | tr | VDD=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 19.8 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 60.8 | ns | ||
| Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V, RG=3.3Ω | 7.2 | ns | ||
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-48V, ID=-10A | 9.86 | nC | ||
| Gate-Source Charge | Qgs | VGS=-4.5V, VDS=-48V, ID=-10A | 3.08 | nC | ||
| Gate-Drain “Miller” Charge | Qgd | VGS=-4.5V, VDS=-48V, ID=-10A | 2.95 | nC | ||
| Gate Resistance | RG | VDS=0V , VGS=0V , f=1MHz | 13.5 | Ω | ||
| Drain Diode Forward Voltage | VSD | VGS=0V,IS=-1A,TJ=25 | -1.2 | V | ||
| Continuous Source Current | IS | VG=VD=0V , Force Current | -18 | A | ||
| Pulsed Source Current | ISM | -36 | A | |||
| Thermal Characteristics | ||||||
| Thermal Resistance Junction to Case | RθJC | 3.6 | /W | |||
| Thermal Resistance Junction to Ambient | RθJA | 62 | /W | |||
2305231125_JSMSEMI-AOD407_C6396162.pdf
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