General Purpose PNP Transistor JTD JTDMMBT3906W Featuring 200mW Power Dissipation and SOT-323 Package
Key Attributes
Model Number:
JTDMMBT3906W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
JTDMMBT3906W
Package:
SOT-323
Product Description
Product Overview
The MMBT3906W is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the MMST3904 and offers a maximum collector current of 200 mA and a collector power dissipation of 200 mW. This transistor is suitable for various switching and amplification circuits.
Product Attributes
- Brand: SHENZHEN JTD ELECTRONICS CO.,LTD
- Marking: K5N
- Package Type: SOT-323
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -200 | mA | |||
| Collector Power Dissipation | PC | Ta=25 | 200 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | ||
| Base cut-off current | IBL | VCE=-30V, VEB(Off)=-3V | -50 | nA | ||
| Collector cut-off current | ICEX | VCE=-30V, VEB(Off)=-3V | -50 | nA | ||
| DC current gain | hFE | VCE=-1V, IC=-100A | 60 | |||
| VCE=-1V, IC=-1mA | 80 | |||||
| VCE=-1V, IC=-10mA | 100 | 300 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-10mA, IB=-1mA | -0.2 | V | ||
| IC=-50mA, IB=-5mA | -0.3 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=-10mA, IB=-1mA | -0.65 | -0.85 | V | |
| IC=-50mA, IB=-5mA | -0.95 | V | ||||
| Transition frequency | fT | VCE=-20V,IC=-10mA , f=100MHz | 250 | MHz | ||
| Collector output capacitance | Cob | VCB=-5V, IE=0, f=1MHz | 4.5 | pF | ||
| Collector output capacitance | Cib | VEB=-0.5V, IE=0, f=1MHz | 10 | pF | ||
| Delay time | td | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA | 35 | ns | ||
| Rise time | tr | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA | 35 | ns | ||
| Storage time | ts | VCC=3V, IC=-10mA, IB1= IB2=-1mA | 225 | ns | ||
| Fall time | tf | VCC=3V, IC=-10mA, IB1= IB2=-1mA | 75 | ns |
2507171700_JTD-JTDMMBT3906W_C49308275.pdf
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