Power management n channel enhancement mode mosfet JSMSEMI AON7400 JSM with rugged and construction
Key Attributes
Model Number:
AON7400-JSM
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@4.5V,9A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
104pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
24W
Input Capacitance(Ciss):
888pF
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
AON7400-JSM
Package:
DFN-8L(3x3)
Product Description
Product Overview
The AON7400 is a N-Channel Enhancement Mode MOSFET designed for power management applications. It features low on-resistance (RDS(ON)) and high current handling capabilities, making it suitable for use in notebook computers, portable equipment, and battery-powered systems. The device is reliable, rugged, and available in lead-free and green packaging.
Product Attributes
- Brand: JSMICRO Semiconductor
- Product Name: AON7400
- Type: N-Channel Enhancement Mode MOSFET
- Certifications: RoHS Compliant, Lead Free and Green Devices Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Maximum Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | ||
| Diode Continuous Forward Current | IS | TC=25°C | 40 | A | ||
| Continuous Drain Current | ID | TC=25°C | 40 | a A | ||
| Continuous Drain Current | ID | TC=100°C | 25 | a A | ||
| Maximum Power Dissipation | PD | TC=25°C | 24 | W | ||
| Maximum Power Dissipation | PD | TC=100°C | 9.6 | W | ||
| Thermal Resistance-Junction to Case | RθJC | Steady State | 4.2 | °C/W | ||
| Continuous Drain Current | ID | TA=25°C | 12 | A | ||
| Continuous Drain Current | ID | TA=70°C | 9.5 | A | ||
| Pulsed Drain Current | IDM | TA=25°C | 40 | b A | ||
| Maximum Power Dissipation | PD | TA=25°C | 2 | W | ||
| Maximum Power Dissipation | PD | TA=70°C | 1.3 | W | ||
| Thermal Resistance-Junction to Ambient | RθJA | t ≤10s | 42 | °C/W | ||
| Thermal Resistance-Junction to Ambient | RθJA | Steady State | 62 | °C/W | ||
| Avalanche Current, Single pulse | IAS | (L=0.1mH) | 24 | c A | ||
| Avalanche Energy, Single pulse | EAS | (L=0.2mH) | 28.8 | c mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250µA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | - | 1 | µA | |
| Zero Gate Voltage Drain Current | IDSS | TJ=85°C | - | 30 | V | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250µA | 1.5 | 1.8 | 2.5 | V |
| Gate Leakage Current | IGSS | VGS=±20V, VDS=0V | - | ±100 | nA | |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, IDS=12A | 7.0 | 9.5 | mΩ | |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, IDS=9A | 9 | 13 | mΩ | |
| Diode Forward Voltage | VSD | ISD=2A, VGS=0V | 0.75 | 1.1 | V | |
| Reverse Recovery Time | trr | ISD=12A, dlSD/dt=100A/µs | 6.6 | - | ns | |
| Charge Time | ta | 3.9 | - | - | ||
| Discharge Time | tb | 2.6 | - | - | ||
| Reverse Recovery Charge | Qrr | 2 | - | nC | ||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 2.5 | - | Ω | |
| Input Capacitance | Ciss | VGS=0V, VDS=15V, Frequency=1.0MHz | 592 | 740 | 888 pF | |
| Output Capacitance | Coss | 133 | 190 | 247 pF | ||
| Reverse Transfer Capacitance | Crss | 44 | 74 | 104 pF | ||
| Turn-on Delay Time | td(ON) | VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω | 9 | 17 | ns | |
| Turn-on Rise Time | tr | 12 | 23 | ns | ||
| Turn-off Delay Time | td(OFF) | 23 | 42 | ns | ||
| Turn-off Fall Time | tf | 6 | 12 | ns | ||
| Total Gate Charge | Qg | VDS=15V, VGS=10V, IDS=12A | 14.5 | 21 | nC | |
| Total Gate Charge | Qg | VDS=15V, VGS=4.5V, IDS=12A | 6.8 | 9.5 | nC | |
| Threshold Gate Charge | Qgth | 1.1 | 1.5 | - | ||
| Gate-Source Charge | Qgs | 2.4 | 3.3 | - | ||
| Gate-Drain Charge | Qgd | 3.9 | 5.4 | - | ||
2311161808_JSMSEMI-AON7400-JSM_C19193745.pdf
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