General Purpose NPN Transistor JUXING S9014-J6 with Low Emitter Cutoff Current and High Reliability

Key Attributes
Model Number: S9014-J6
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S9014-J6
Package:
SOT-23
Product Description

Product Overview

The S9014 is an NPN bipolar junction transistor (BJT) encapsulated in a SOT-23 plastic package. It is designed for general-purpose applications and is complementary to the S9015 transistor.

Product Attributes

  • Marking: J6

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= 100A, IE=050V
Collector-emitter breakdown voltageV(BR)CEOIC= 0.1mA, IB=045V
Emitter-base breakdown voltageV(BR)EBOIE=100A, IC=05V
Collector cut-off currentICBOVCB=50 V , IE=00.1A
Collector cut-off currentICEOVCE=35V , IB=01A
Emitter cut-off currentIEBOVEB= 3V , IC=00.1A
DC current gainhFEVCE=5V, IC= 1mA2001000
Collector-emitter saturation voltageVCE(sat)IC=100 mA, IB= 5mA0.3V
Base-emitter saturation voltageVBE(sat)IC=100 mA, IB= 5mA1V
Transition frequencyfTVCE=5V, IC= 10mA, f=30MHz150MHz
Collector-Base VoltageVCBO50V
Collector-Emitter VoltageVCEO45V
Emitter-Base VoltageVEBO5V
Collector CurrentIC100mA
Collector Power DissipationPC200mW
Thermal Resistance From Junction To AmbientRJA625/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2410121447_JUXING-S9014-J6_C5356025.pdf

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