PNP Silicon Transistor JUXING SS8550 Y2 Suitable for Amplification and Switching Electronic Circuits
Key Attributes
Model Number:
SS8550 Y2
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
SS8550 Y2
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP silicon transistor designed for general purpose applications. It offers high collector current capability and is complementary to the SS8050. This transistor is suitable for various electronic circuits requiring amplification or switching.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -1.5 | A | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE(1) | VCE=-1V, IC=-100mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=-1V, IC=-800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
| Base-emitter voltage | VBE | VCE=-1V, IC=-10mA | -1 | V | ||
| Transition frequency | fT | VCE=-10V,IC=-50mA , f=30MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF |
SOT-23 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
| A | 0.900 - 1.150 | 0.035 - 0.045 |
| A1 | 0.000 - 0.100 | 0.000 - 0.004 |
| A2 | 0.900 - 1.050 | 0.035 - 0.041 |
| b | 0.300 - 0.500 | 0.012 - 0.020 |
| c | 0.080 - 0.150 | 0.003 - 0.006 |
| D | 2.800 - 3.000 | 0.110 - 0.118 |
| E | 1.200 - 1.400 | 0.047 - 0.055 |
| E1 | 2.250 - 2.550 | 0.089 - 0.100 |
| e | ||
| e1 | 1.800 - 2.000 | 0.071 - 0.079 |
| L | ||
| L1 | 0.300 - 0.500 | 0.012 - 0.020 |
| 0 - 8 | 0 - 8 | |
| 0.550 REF | 0.022 REF |
SOT-23 Suggested Pad Layout
| 0.950 TYP | 0.037 TYP |
2410121322_JUXING-SS8550-Y2_C5365370.pdf
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