Power MOSFET JUXING JX2300 N Channel Enhancement Mode Designed for Portable Device Power Management
Key Attributes
Model Number:
JX2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-50℃~+150℃@(Tj)
RDS(on):
49mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
400mW
Mfr. Part #:
JX2300
Package:
SOT-23
Product Description
Product Overview
N-Channel Enhancement Mode Power MOSFET designed for portable devices and DC/DC converters. Features TrenchFET technology for efficient load switching.
Product Attributes
- Packaging: SOT-23
- Epoxy Flammability: UL 94V-0
- Mounting Position: Any
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=10uA | 20 | V | ||
| VGS=0V, ID=10uA | V | |||||
| VGS=0V, ID=10uA | V | |||||
| Gate-Threshold voltage* | V GS (th) | VDS=VGS, ID=250uA | 0.45 | 0.62 | 1.0 | V |
| VDS=VGS, ID=250uA | V | |||||
| VDS=VGS, ID=250uA | V | |||||
| Gate-body Leakage | IGSS | VDS=0V, VGS=10V | 100 | nA | ||
| Zero Gate Voltage Drain current | IDSS | VDS=16V, VGS=0V | 1 | uA | ||
| Drain-Source On-Resistance (a) | RDS(ON) | VGS=4.5V, ID=4.5A | 19.5 | 25 | m | |
| VGS=2.5V, IC=3.0A | 25 | 32 | m | |||
| VGS=1.8V, IC=2.7A | 33 | 49 | m | |||
| Forward trans conductance (a) | gfs | VDS=5V, ID=3.6A | 8 | S | ||
| Diode forward voltage | VSD | IS=1A, VGS=0V | 0.7 | 1.3 | V |
2411220527_JUXING-JX2300_C19193799.pdf
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