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quality NPN transistor JUXING MMBT2222A-1P in SOT-23 package designed for switching and amplification factory
quality NPN transistor JUXING MMBT2222A-1P in SOT-23 package designed for switching and amplification factory

NPN transistor JUXING MMBT2222A-1P in SOT-23 package designed for switching and amplification

Key Attributes
Model Number: MMBT2222A-1P
Product Custom Attributes
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT2222A-1P
Package:
SOT-23
Product Description

MMBT2222A TRANSISTOR (NPN)

The MMBT2222A is an NPN transistor featuring epitaxial planar die construction. It is designed for general-purpose applications and offers complementary PNP type availability (MMBT2907A). This device is suitable for various switching and amplification circuits.

Product Attributes

  • Brand: trr-jx
  • Model: MMBT2222A
  • Type: NPN Transistor
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 600 mA
Collector Dissipation PC (Ta=25) 300 mW
Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICBO VCB=60V, IE=0 0.01 A
Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 A
Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 A
DC current gain hFE VCE=10V, IC= 150mA 100 300
DC current gain hFE VCE=10V, IC= 0.1mA 40
DC current gain hFE VCE=10V, IC= 500mA 42
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 1 V
Collector-emitter saturation voltage VCE(sat) IC=150 mA, IB=15mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 2.0 V
Base-emitter saturation voltage VBE(sat) IC=150 mA, IB=15mA 1.2 V
Transition frequency fT VCE=20V, IC= 20mA, f=100MHz 300 MHz
Delay time td VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 ns
Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 25 ns
Storage time tS VCC=30V, IC=150mA IB1=-IB2=15mA 225 ns
Fall time tf VCC=30V, IC=150mA IB1=-IB2=15mA 60 ns

2410121503_JUXING-MMBT2222A-1P_C5279930.pdf

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