P Channel MOSFET KEXIN 2KJ7110DFN with DFN1006 3 Package and Power Handling at 20V Drain Source Voltage
Key Attributes
Model Number:
2KJ7110DFN
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@4.5V,0.66A
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
15pF@16V
Number:
1 P-Channel
Input Capacitance(Ciss):
170pF@16V
Pd - Power Dissipation:
100mW
Gate Charge(Qg):
-
Mfr. Part #:
2KJ7110DFN
Package:
DFN1006-3
Product Description
Product Overview
The 2KJ7110DFN is a P-Channel MOSFET in a DFN1006-3 SMD package, designed for various electronic applications. It features a drain-source voltage of -20V and a continuous drain current of -0.66A. With low on-resistance values at different gate-source voltages, it offers efficient power handling.
Product Attributes
- Brand: Kexin
- Origin: China
- Package Type: DFN1006-3
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID = -250 A, VGS = 0V |
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | -0.66 | A | Note 1. |
| Pulsed Drain Current | IDM | -1.2 | A | tp=10s |
| Power Dissipation | PD | 100 | mW | Note 1. |
| Thermal Resistance, Junction-to-Ambient | RJA | 1250 | /W | Note 1. |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | Tstg | -55 to 150 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = -20 V, VGS = 0 V |
| Gate to Source Leakage Current | IGSS | 20 | A | VDS = 0 V, VGS = 10 V |
| Gate to Source Threshold Voltage | VGS(th) | -0.35 to -1.1 | V | VDS = VGS , ID = -250A |
| Forward Transconductance | gFS | 1.2 | S | VDS = -10 V, ID = -0.54 A |
| Diode Forward Voltage | VSD | -1.2 | V | IS = -0.5 A |
| Input Capacitance | Ciss | 113 to 170 | pF | VGS = 0 V, VDS = -16 V, f = 1 MHz |
| Output Capacitance | Coss | 15 to 25 | pF | VGS = 0 V, VDS = -16 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 9 to 15 | pF | VGS = 0 V, VDS = -16 V, f = 1 MHz |
| Turn-On Delay Time | td(on) | 9 | ns | VGS = -10V, VDD = -4.5 V, ID = -200mA, RGEN = 10 |
| Turn-On Rise Time | tr | 5.8 | ns | VGS = -10V, VDD = -4.5 V, ID = -200mA, RGEN = 10 |
| Turn-Off Delay Time | td(off) | 32.7 | ns | VGS = -10V, VDD = -4.5 V, ID = -200mA, RGEN = 10 |
| Turn-Off Fall Time | tf | 20.3 | ns | VGS = -10V, VDD = -4.5 V, ID = -200mA, RGEN = 10 |
| Static Drain-Source On-Resistance | RDS(On) | <500 | m | VGS = -4.5 V, ID = -1 A |
| Static Drain-Source On-Resistance | RDS(On) | <600 | m | VGS = -2.5 V, ID = -0.8 A |
| Static Drain-Source On-Resistance | RDS(On) | 850 (typ.) | m | VGS = -1.8 V, ID = -0.5 A |
2410121742_KEXIN-2KJ7110DFN_C499620.pdf
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