Low Threshold Voltage N Channel MOSFET KEXIN 2KK5043 in Compact SOT 523 Package for Power Management
Key Attributes
Model Number:
2KK5043
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
850mΩ@2.5V,500mA
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
80mW
Gate Charge(Qg):
750pC@10V
Mfr. Part #:
2KK5043
Package:
SOT-523-3
Product Description
Product Overview
The 2KK5043 is an N-Channel MOSFET in a SOT-523 SMD package. It features a Trench FET Power MOSFET design, rated for 1.8-V, offering low on-resistance and a low threshold voltage. This ESD-protected MOSFET is suitable for various applications requiring efficient switching and low power dissipation.
Product Attributes
- Brand: Kexin
- Origin: China (implied by .cn domain)
- Type: N-Channel MOSFET
- Package: SOT-523
- Marking: A8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 100 | nA | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=4.5V | 1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=3V , ID=250A | 0.45 | 0.9 | V | |
| Gate Threshold Voltage | VGS(th) | VGS=4.5V, ID=600mA | 0.41 | 0.7 | V | |
| Gate Threshold Voltage | VGS(th) | VGS=2.5V, ID=500mA | 0.53 | 0.85 | V | |
| Gate Threshold Voltage | VGS(th) | VGS=1.8V, ID=350mA | 0.7 | 1.25 | V | |
| Forward Transconductance | gFS | VDS=10V,ID=400mA | 1 | mS | ||
| Static Drain-Source On-Resistance | RDS(On) | VDS=10V, ID=250mA, VGS=4.5V | 0.7 | |||
| Continuous Drain Current | ID | TA = 25 (Note 2) | 500 | mA | ||
| Continuous Drain Current | ID | TA = 85 (Note 2) | 400 | mA | ||
| Pulsed Drain Current | IDM | (Note 1) | 600 | mA | ||
| Continuous Source Current | IS | TA = 25 (Note 2) | 275 | mA | ||
| Continuous Source Current | IS | TA = 85 (Note 2) | 250 | mA | ||
| Power Dissipation | PD | TA = 25 (Note 2) | 175 | mW | ||
| Power Dissipation | PD | TA = 85 (Note 2) | 150 | mW | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 6 | V | |||
| Total Gate Charge | Qg | 750 | pC | |||
| Gate Source Charge | Qgs | 75 | pC | |||
| Gate Drain Charge | Qgd | 225 | pC | |||
| Turn-On Delay Time | td(on) | 5 | ns | |||
| Turn-On Rise Time | tr | 5 | ns | |||
| Turn-Off Delay Time | td(off) | 25 | ns | |||
| Turn-Off Fall Time | tf | 11 | ns | |||
| Diode Forward Voltage | VSD | ISD=150mA,VGS=0V | 1.2 | V |
2410121742_KEXIN-2KK5043_C499627.pdf
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