Switching N Channel Enhancement MOSFET KEXIN KI2310DS Featuring Low On Resistance and High Drain Current
Key Attributes
Model Number:
KI2310DS
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@2.5V,5.5A
Gate Threshold Voltage (Vgs(th)):
450mV
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
1.3W
Mfr. Part #:
KI2310DS
Package:
SOT-23
Product Description
Product Overview
This N-Channel Enhancement MOSFET is designed for various applications requiring efficient switching. It features low on-resistance at specified gate-source voltages and continuous drain currents, making it suitable for power management tasks.
Product Attributes
- Brand: KEXIN
- Origin: www.kexin.com.cn
- SMD Type: SOT-23-3
- Marking: 2310
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 20 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=20V, VGS=0V | 1 | V | ||
| VDS=20V, VGS=0V, TJ=55 | 10 | uA | ||||
| VDS=0V, VGS=10V | 10 | uA | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.45 | 1 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=4.5V, ID=6.5A | 22 | m | ||
| VGS=2.5V, ID=5.5A | 30 | m | ||||
| Forward Transconductance | gFS | VDS=5V, ID=6.5A | 6 | S | ||
| Maximum Body-Diode Continuous Current | IS | 1.6 | A | |||
| Diode Forward Voltage | VSD | IS=1.6A,VGS=0V | 0.76 | 1.2 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| VDS=20V, VGS=0V, TJ=55 | 10 | A | ||||
| Continuous Drain Current | ID | TA=25 | 6.5 | A | ||
| TA=70 | 4.8 | A | ||||
| Pulsed Drain Current | IDM | 30 | A | |||
| Power Dissipation | PD | TA=25 | 1.3 | W | ||
| TA=70 | 0.8 | W | ||||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | to | 150 | ||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V |
2410121715_KEXIN-KI2310DS_C489368.pdf
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