High Surge Capability Surface Mount Rectifier JUXING G610DS with Low Forward Voltage and Power Loss
Key Attributes
Model Number:
G610DS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
5uA@1kV
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1.1V@5A
Current - Rectified:
6A
Mfr. Part #:
G610DS
Package:
TO-252
Product Description
Surface Mount Standard Rectifiers G601 THRU G610
High current capability, low forward voltage drop, and low power loss characterize these surface mount standard rectifiers. Designed for high efficiency and high surge capability, they are suitable for various applications requiring reliable rectification. The high temperature soldering is guaranteed, and they offer flexibility with any mounting position. Available in TO-251 (I-PAK) and TO-252 (D-PAK) packages.
Product Attributes
- Brand: JX (implied by URL)
- Package Types: TO-251 (I-PAK), TO-252 (D-PAK)
- Mounting Type: Surface Mount
Technical Specifications
| Model | VRRM (V) | VRMS (V) | VDC (V) | I(AV) (A) | IFSM (A) | VF (V) @ 5.0A | IR (uA) @ Rated VDC, TJ=125 | CJ (pF) | RJC (/W) | TJ () | TSTG () |
| G601VS/DS | 100 | 70 | 100 | 5.0 | 200 | 1.1 | 50 | 1000 | 6.0 | -55 to +150 | -55 to +150 |
| G602VS/DS | 200 | 140 | 200 | 5.0 | 200 | 1.1 | 25 | 700 | 6.0 | -55 to +150 | -55 to +150 |
| G604VS/DS | 400 | 280 | 400 | 5.0 | 200 | 1.1 | 50 | 1000 | 6.0 | -55 to +150 | -55 to +150 |
| G606VS/DS | 600 | 420 | 600 | 5.0 | 200 | 1.1 | 25 | 700 | 6.0 | -55 to +150 | -55 to +150 |
| G608VS/DS | 800 | 560 | 800 | 5.0 | 200 | 1.1 | 50 | 1000 | 6.0 | -55 to +150 | -55 to +150 |
| G610VS/DS | 1000 | 700 | 1000 | 5.0 | 200 | 1.1 | 25 | 700 | 6.0 | -55 to +150 | -55 to +150 |
2312220916_JUXING-G610DS_C3011048.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
