power transistor KIA Semicon Tech KNF7N65B 7A 650V N channel MOSFET with fast recovery body diode
Key Attributes
Model Number:
KNF7N65B
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
1.1nF
Output Capacitance(Coss):
80pF
Pd - Power Dissipation:
42W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
KNF7N65B
Package:
TO-220F
Product Description
Product Overview
The 7N65B is a 7A, 650V N-CHANNEL PLANAR MOSFET featuring an advanced planar process. It offers a low Gate Charge for minimized switching loss and a fast recovery body diode. This MOSFET is ideal for applications such as adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KMOS Semiconductor
- Part Number: KNF7N65B
- Package: TO-220F
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 650 | - | - | V |
| VDS=650V, VGS=0V | - | - | 1 | uA | ||
| Gate-to-Source Voltage | VGSS | - | - | ±30 | V | |
| Continuous Drain Current | ID | - | - | 7.0 | A | |
| Pulsed Drain Current | IDM | at VGS=10V | - | - | 28 | A |
| Drain-to-Source ON Resistance | RDS(ON) | VGS=10V, ID=3A | - | 1.2 | 1.4 | Ω |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.0 | - | 4.0 | V |
| Input Capacitance | Ciss | VGS=0V,VDS=25V, f=1.0MHZ | - | 1100 | - | pF |
| Output Capacitance | Coss | - | 80 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDD=325V,ID=7A, VGS=0 to 10V | - | 18 | - | nC |
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | - | - | 7.0 | A |
| Pulsed Source Current | ISM | - | - | 28 | A | |
| Forward Voltage | VSD | IS=7A, VGS=0V | - | - | 1.5 | V |
| Reverse recovery time | trr | IF=7A, VGS=0V di/dt=100A/us | - | 350 | - | ns |
| Reverse recovery charge | Qrr | - | 1.1 | - | uC | |
| Power Dissipation | PD | - | - | 42 | W | |
| Thermal Resistance, Junction-to-Case | RJC | - | 2.98 | - | ºC/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 100 | - | ºC/W | |
| Operating and Storage Temperature Range | TJ&TSTG | -55 | - | 150 | ºC |
2509041415_KIA-Semicon-Tech-KNF7N65B_C51883051.pdf
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