Low On Resistance N Channel Power MOSFET 150A 30V KIA Semicon Tech KNB2803T for Power Management
Key Attributes
Model Number:
KNB2803T
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
375pF
Pd - Power Dissipation:
150W
Output Capacitance(Coss):
445pF
Input Capacitance(Ciss):
3.51nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
KNB2803T
Package:
TO-263
Product Description
Product Overview
The KIA SEMICONDUCTORS KNB2803T is a 150A, 30V N-Channel Power MOSFET featuring Advanced Trench technology. It offers a low on-resistance of 2.4m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This green device is 100% Vds and UIS tested, making it suitable for demanding power applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNB2803T
- Package: TO-263
- Technology: KMOS Semiconductor
- Green Device Available: Yes
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| VDS=30V,VGS=0V,TC=25C | - | - | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 2.4 | 3.0 | m |
| VGS=4.5V, ID=15A | - | 3.2 | 4.0 | m | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V , f=1.0MHz | - | 3510 | - | pF |
| Output Capacitance | Coss | VDS=15V, VGS=0V , f=1.0MHz | - | 445 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V , f=1.0MHz | - | 375 | - | pF |
| Continuous Drain Current | ID | TC=25C | - | - | 150 | A |
| TC=100C | - | - | 95 | A | ||
| Pulsed Drain Current | IDM | @ Current-Pulsed | - | - | 640 | A |
| Total Power Dissipation | PD | TC=25C | - | - | 150 | W |
| Avalanche Energy | EAS | VDD=20V, VGS=10V, L=0.5mH, IAS=38A | - | 381 | - | mJ |
| Operation Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | C |
| Thermal Resistance, Junction-to-Case | RJC | - | - | - | 1.0 | C/W |
| Source-Drain Current (Body Diode) | ISD | - | - | - | 150 | A |
| Diode Forward Voltage | VSD | VGS=0V, ISD=30A,TJ=25C | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25C, IF=30A, di/dt=100A/s | - | 18 | - | nS |
| Reverse Recovery Charge | Qrr | TJ=25C, IF=30A, di/dt=100A/s | - | 6.8 | - | nC |
2509041415_KIA-Semicon-Tech-KNB2803T_C51883043.pdf
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