130A 60V N CHANNEL MOSFET designed by KIA Semicon Tech KIA2906AP for power supply UPS and power tool
Key Attributes
Model Number:
KIA2906AP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
451pF
Number:
1 N-channel
Output Capacitance(Coss):
926pF
Pd - Power Dissipation:
200W
Input Capacitance(Ciss):
3.1nF
Gate Charge(Qg):
66.34nC@10V
Mfr. Part #:
KIA2906AP
Package:
TO-220-3
Product Description
Product Overview
This is a 130A, 60V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 2906A. It features low Rds-on (5.5m typ. @ VGS=10V) to minimize conductive loss and high avalanche current. This device is suitable for applications in Power Supply, UPS, and Power Tool systems. Lead-free and green options are available.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 2906A
- Type: N-CHANNEL MOSFET
- Certifications: Lead free and green device available
Technical Specifications
| Parameter | Symbol | Rating | Units | To-220 | To-247/3P | Test Conditions | |
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V,IDS=250A | |||
| Gate-source voltage | VGSS | +25 | V | ||||
| Junction and storage temperature range | TSTG | -55 to175 | C | ||||
| Continuous drain current | ID | 130 | A | TC=25C | |||
| TC=100C | 90 | ||||||
| Pulse drain current | IDP | 360 | A | TC=25C | |||
| Avalanche current | IAS | 25 | A | Starting TJ=25,L=0.5mH,IAS=48A | |||
| Maximum power dissipation | PD | 200 | W | TC=25 C | |||
| TC=100C | 100 | ||||||
| Thermal resistance,Junction-ambient | RJA | 62.5 | C/W | ||||
| Thermal resistance,Junction-case | RJC | 0.75 | 0.5 | C/W | |||
| Zero gate voltage drain current | IDSS | - | 1 A | VDS=48V, VGS=0V | |||
| TJ=125C | - | 30 | A | ||||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250A | |
| Gate leakage current | IGSS | - | +100 | nA | VGS=+25V, VDS=0V | ||
| Drain-source on-state resistance | RDS(on) | - | 5.5 | 7 | m | VGS=10V,ID=50A | |
| Gate resistance | Rg | - | 1.2 | VDS=0V, VGS=0V,f=1MHz | |||
| Diode forward voltage | VSD | - | 0.88 | 1.3 | V | ISD=50A, VGS=0V | |
| Diode continuous forward current | IS | - | - | 50 | A | Package limitation current is 50A. | |
| Reverse recovery time | trr | - | 15.2 | - | nS | ISD=70A,VDD=50V, dlSD/dt=100A/s | |
| Reverse recovery charge | Qrr | - | 6.16 | - | nC | ||
| Input capacitance | Ciss | - | 3100 | - | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | - | 926 | - | pF | ||
| Reverse transfer capacitance | Crss | - | 451 | - | pF | ||
| Turn-on delay time | td(on) | - | 20 | - | ns | VDD=30V, ID=70A, RG=25,VGS=10V | |
| Rise time | tr | - | 83.7 | - | ns | ||
| Turn-off delay time | td(off) | - | 108 | - | ns | ||
| Fall time | tf | - | 92.6 | - | ns | ||
| Total gate charge | Qg | - | 66.34 | - | nC | VDS=50V, VGS=10V ID=70A | |
| Gate-source charge | Qgs | - | 12.35 | -- | |||
| Gate-drain charge | Qg d | - | 33.52 | -- |
2409302301_KIA-Semicon-Tech-KIA2906AP_C2905928.pdf
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