P channel MOSFET KIA Semicon Tech KIA3415 offering low gate charge and excellent RDSon for switching
Key Attributes
Model Number:
KIA3415
Product Custom Attributes
Drain To Source Voltage:
16V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
75mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
800mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
KIA3415
Package:
SOT-23
Product Description
Product Overview
The KIA3415 is a P-CHANNEL MOSFET utilizing advanced trench technology, offering excellent RDS(on) and low gate charge. It is designed for operation with gate voltages as low as 1.8V, making it suitable for load switch or PWM applications. This is a standard, Pb-free product that meets ROHS & Sony 259 specifications and is available as a Green Product option.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KIA3415
- Type: P-CHANNEL MOSFET
- Certifications: ROHS & Sony 259 specifications (Pb-free)
- Environmental: Green Product option
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Drain-source voltage | VDS | -16 | V | |||
| Gate-source voltage | VGS | +8 | V | |||
| Continuous drain current | ID | TA=25C | -4.0 | A | ||
| Continuous drain current | ID | TA=70C | -3.5 | A | ||
| Pulsed drain current | IDM | -30 | A | |||
| Total power dissipation | PD | TA=25 C | 1.4 | W | ||
| Total power dissipation | PD | TA=70C | 0.9 | W | ||
| Junction and storage temperature range | TJ ,TSTG | -55 | 150 | C | ||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=-250A | -16 | V | ||
| Zero gate voltage drain current | IDSS | VDS=-12V, VGS=0V | -50 | nA | ||
| Gate-body leakage current | IGSS | VGS=+8V, VDS=0V | +100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -0.4 | -0.55 | -0.8 | V |
| Static drain-source on-resistance | RDS(on) | VGS=-4.5V,ID=-4.0A | 40 | 45 | m | |
| Static drain-source on-resistance | RDS(on) | VGS=-2.5V,ID=-2.5A | 50 | 54 | m | |
| Static drain-source on-resistance | RDS(on) | VGS=-1.8V,ID=-2.0A | 70 | 75 | m | |
| Forward transconductance | gfs | VDS=-5.0V, ID=-4A | 8 | 16 | S | |
| Diode forward voltage | VSD | VGS=0V,IS=-1A | -1.28 | V | ||
| Maximum body-diode continuous current | IS | -2.2 | A | |||
| Input capacitance | Ciss | VDS=-10V,VGS=0V, f=1MHz | 1450 | pF | ||
| Output capacitance | Coss | 205 | pF | |||
| Reverse transfer capacitance | Crss | 160 | pF | |||
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | 6.5 | |||
| Total gate charge | Qg | VDS=-10V, VGS=-4.5V ID =-4.0A | 17.2 | nC | ||
| Gate-source charge | Qgs | 1.3 | ||||
| Gate-drain charge | Qgd | 4.5 | ||||
| Turn-on delay time | td(on) | VDS=-10V, RL=2.5,, RG=3, VGS=-4.5V | 9.5 | ns | ||
| Rise time | tr | 17 | ||||
| Turn-off delay time | td(off) | 94 | ||||
| Fall time | tf | 35 | ||||
| Reverse recovery time | trr | IF=-4A,dI/dt=100A/s | 31 | nS | ||
| Reverse recovery charge | Qrr | 13.8 | nC |
2410010000_KIA-Semicon-Tech-KIA3415_C116040.pdf
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