N channel MOSFET KIA Semicon Tech KNB2408A designed for uninterruptible power supplies and switching
Key Attributes
Model Number:
KNB2408A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
810pF
Output Capacitance(Coss):
950pF
Input Capacitance(Ciss):
13.5nF
Pd - Power Dissipation:
270W
Gate Charge(Qg):
260nC@10V
Mfr. Part #:
KNB2408A
Package:
TO-263
Product Description
Product Overview
The KNX2408A is an N-CHANNEL MOSFET from KIA SEMICONDUCTORS, utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Rating | Units | TO-220 | TO-263 | TO-247 |
| Drain-source voltage | VDSS | 80 | V | |||
| Gate-source voltage | VGSS | +20 | V | |||
| Maximum junction temperature | TJ | 175 | C | |||
| Storage temperature range | TSTG | -55 to175 | C | |||
| Continuous drain current (TC=25C) | ID | 190 | A | |||
| Pulse drain current (Note1, TC=25C) | IDM | 760 | A | |||
| Avalanche energy, single pulsed (Note2) | EAS | 1.4 | J | |||
| Maximum power dissipation (TC=25 C) | PD | 270 | W | |||
| Thermal Resistance, Junction-to-Case | RJC | C /W | 0.55 | 0.46 | ||
| Drain-source breakdown voltage | BVDSS | 80 | V | |||
| Drain-Source Leakage Current | IDSS | 1 | A | |||
| Gate-Soure Forward Leakage | IGSS(F) | 100 | nA | |||
| Gate-Soure Reverse Leakage | IGSS(R) | -100 | nA | |||
| Drain-source on-Resistance (Note3) | RDS(on) | 3.7 - 4.5 | m | |||
| Gate threshold voltage | VGS(th) | 2.0 - 4.0 | V | |||
| Forward Transconductance | gfs | 15 | S | |||
| Total gate charge | Qg | 260 | nC | |||
| Gate-source charge | Qgs | 75 | ||||
| Gate-drain charge | Qg d | 80 | ||||
| Turn-on delay time | td(on) | 25 | ns | |||
| Rise time | tr | 21 | ||||
| Turn-off delay time | td(off) | 48 | ||||
| Fall time | tf | 18 | ||||
| Input capacitance | Ciss | 13500 | pF | |||
| Output capacitance | Coss | 950 | ||||
| Reverse transfer capacitance | Crss | 810 | ||||
| Diode Forward voltage | VSD | 1.3 | V |
2409302232_KIA-Semicon-Tech-KNB2408A_C2896645.pdf
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