Power MOSFET 2A 1000V N Channel KIA Semicon Tech KND41100A for Adaptors Chargers and SMPS Circuits
Key Attributes
Model Number:
KND41100A
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4pF
Output Capacitance(Coss):
40pF
Input Capacitance(Ciss):
370pF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
KND41100A
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX41100A is a 2.0A, 1000V N-CHANNEL MOSFET designed for various power applications. It features low gate charge for minimized switching loss and a fast recovery body diode. Key applications include adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KIA
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Package | Brand | VDSS (V) | ID (A) | RDS(ON) Typ. () | VGS(TH) Typ. (V) | Qg Typ. (nC) |
| KND41100A | TO-252 | KIA | 1000 | 2.0 | 9.6 (@VGS=10V) | 2.0 | 15 (@VDD=500V, ID=2.0A, VGS=10V) |
| KNP41100A | TO-220 | KIA | 1000 | 2.0 | 9.6 (@VGS=10V) | 2.0 | 15 (@VDD=500V, ID=2.0A, VGS=10V) |
| KNF41100A | TO-220F | KIA | 1000 | 2.0 | 9.6 (@VGS=10V) | 2.0 | 15 (@VDD=500V, ID=2.0A, VGS=10V) |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-to-Source Breakdown Voltage | VGS=0V, ID=250uA | 1000 | -- | -- | V |
| IDSS | Drain-to-Source Leakage Current | VDS=1000V, VGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-to-Source Leakage Current | VGS=30V, VDS=0V | -100 | -- | 100 | nA |
| RDS(ON) | Drain-to-Source ON Resistance | VGS=10V, ID=1.0A | -- | 9.6 | 12 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250uA | 2.0 | -- | 4.0 | V |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 370 | -- | pF |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 4.0 | -- | pF |
| Coss | Output Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 40 | -- | pF |
| Qg | Total Gate Charge | VDD=500V, ID=2.0A, VGS=10V | -- | 15 | -- | nC |
| Qgs | Gate-to-Source Charge | VDD=500V, ID=2.0A, VGS=10V | -- | 2.1 | -- | nC |
| Qgd | Gate-to-Drain (Miller) Charge | VDD=500V, ID=2.0A, VGS=10V | -- | 6.0 | -- | nC |
| td(ON) | Turn-on Delay Time | VDD=500V, ID=2.0A, RG=12, VGS=10V | -- | 8.0 | -- | nS |
| trise | Rise Time | VDD=500V, ID=2.0A, RG=12, VGS=10V | -- | 6.0 | -- | nS |
| td(OFF) | Turn-Off Delay Time | VDD=500V, ID=2.0A, RG=12, VGS=10V | -- | 36 | -- | nS |
| tfall | Fall Time | VDD=500V, ID=2.0A, RG=12, VGS=10V | -- | 15 | -- | nS |
| ISD | Continuous Source Current | -- | -- | -- | 2 | A |
| VSD | Forward Voltage | IS=2.0A, VGS=0V | -- | - | 1.5 | V |
| trr | Reverse recovery time | VGS=0V ,IF=2.0A, diF/dt=-100A/s | -- | 320 | -- | ns |
| Qrr | Reverse recovery charge | VGS=0V ,IF=2.0A, diF/dt=-100A/s | -- | 1.0 | -- | uC |
2409302302_KIA-Semicon-Tech-KND41100A_C2896657.pdf
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