85V MOSFET KIA Semicon Tech KCD2908A designed for motor drives and general purpose power applications
Key Attributes
Model Number:
KCD2908A
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
45pF
Output Capacitance(Coss):
625pF
Pd - Power Dissipation:
85W
Input Capacitance(Ciss):
5.25nF
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
KCD2908A
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS 2908A is an 85V N-CHANNEL MOSFET featuring advanced SGT technology for extremely low RDS(on) of 3.7 m at Vgs=10V and an excellent gate charge x RDS(on) product (FOM). This MOSFET is designed for applications such as Motor Drives, SR (Synchronous Rectification), DC/DC Converters, and general-purpose applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: 2908A
- Technology: SGT
Technical Specifications
| Parameter | Symbol | Conditions | TO-263 | TO-252 | Units |
| Drain-to-Source Voltage | VDSS | 85 | 85 | V | |
| Continuous Drain Current | ID | TC=25 C | 130 | 110 | A |
| TC=100 C | 78 | 66 | A | ||
| Pulsed drain current | IDP | (TC = 25C, tp limited by Tjmax) | 480 | 480 | A |
| Avalanche energy, single pulse | EAS | (L=0.5mH, Rg=25) | 625 | 625 | mJ |
| Gate-Source voltage | VGS | 20 | 20 | V | |
| Power dissipation | Ptot | (TC = 25 C) | 238 | 85 | W |
| Junction & Storage Temperature Range | TJ& TSTG | -55 to 175 | -55 to 175 | C | |
| Thermal resistance, junction-ambient | RJA | 60 | 60 | C/W | |
| Thermal resistance, Junction-case | RJC | 0.63 | 1.76 | C/W | |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 85 | 85 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=85V , VGS=0V ,Tj=25 C | 1 | 1 | A |
| VDS=85V , VGS=0V, Tj=125 C | 5 | 5 | |||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A ,Tj=25 C | 2.0 - 4.0 | 2.0 - 4.0 | V |
| Gate leakage current | IGSS | VGS=20V,VDS=0V | - | - | 100 nA |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=40A(TO-252) | - | 4.3 - 5.0 | m |
| VGS=10V,ID=40ATO-263) | 3.7 - 4.6 | - | m | ||
| Transconductance | gfs | VDS=5V,ID=40A | 90 | 90 | S |
| Gate Resistance | RG | VGS=0V,VDS=0V F=1MHz | 1.9 | 1.9 | |
| Input capacitance | Ciss | VDS=40V,VGS=0V, F=1MHz | 5250 | 5250 | pF |
| Output capacitance | Coss | 625 | 625 | pF | |
| Reverse transfer capacitance | Crss | 45 | 45 | pF | |
| Turn-on delay time | td(on) | VDS=40V,Tj=25 C, VGS=10V,RL=3 | 20 | 20 | ns |
| Rise time | tr | 38 | 38 | ns | |
| Turn-off delay time | td(off) | 45 | 45 | ns | |
| Fall time | tf | 20 | 20 | ns | |
| Total gate charge | Qg | VDS=50V,ID=20A, VGS=10V, F=1MHz | 77 | 77 | nC |
| Gate-source charge | Qgs | 31 | 31 | nC | |
| Gate-drain charge | Qgd | 17 | 17 | nC | |
| Diode forward voltage | VSD | VGS=0V,ISD=40A | 0.85 - 1.4 | 0.85 - 1.4 | V |
| Reverse recovery time | trr | IF=30A DlF/dt=500A/s | 68 | 68 | ns |
| Reverse recovery charge | Qrr | 260 | 260 | nC |
2411121101_KIA-Semicon-Tech-KCD2908A_C2896649.pdf
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