N Channel MOSFET 190A 40V KIA Semicon Tech KNP2404A for Power Supply and DC DC Converter Applications
Key Attributes
Model Number:
KNP2404A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
675pF
Number:
1 N-channel
Input Capacitance(Ciss):
6.01nF
Pd - Power Dissipation:
123W
Mfr. Part #:
KNP2404A
Package:
TO-220
Product Description
Product Overview
The KIA Semiconductors KNX2404A is a 190A, 40V N-Channel MOSFET designed for high-efficiency power applications. It features low on-state resistance (RDS(on)) to minimize conductive losses and high avalanche current capability. This device is suitable for power supplies and DC-DC converters.
Product Attributes
- Brand: KIA
- Product Name: KNX2404A
- Channel Type: N-CHANNEL
- Voltage Rating: 40V
- Current Rating: 190A
- Lead Free and Green Device Available
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-to-source voltage | VDSS | 40 | V | |||
| Gate-to-source voltage | VGSS | +25 | V | |||
| Continuous drain current | ID | TC=25C(Silicon limited) | 190 | A | ||
| TC=25C(Package limited) | 120 | A | ||||
| TC=100C (Silicon limited) | 109 | A | ||||
| Pulsed drain current | IDP | TC=25 C | 480 | A | ||
| Avalanche current(L=0.5mH) | IAS | 46 | A | |||
| Avalanche energy(L=0.5mH) | EAS | 529 | mJ | |||
| Maximum power dissipation | PD | TC=25 C | 123 | W | ||
| TC=100 C | 82 | W | ||||
| Junction & storage temperature range | TJ,TSTG | -55 | 150 | C | ||
| Thermal resistance-junction to case | Rjc | 1.02 | C/W | |||
| Thermal resistance-junction to ambient | Rja | 80 | C/W | |||
| Drain-source breakdown voltage | BVDSS | VGS=0V,IDS=250A | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS=64V,VGS=0V | 1 | A | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, IDS=250A | 2 | 4 | V | |
| Gate leakage current | IGSS | VGS=+25V,VDS=0V | +100 | nA | ||
| Drain-source on-state resistance | RDS(on) | VGS=10V,IDS=30A | 2.2 | 3.5 | m | |
| VGS=10V,IDS=30A | 2.2 | 3.5 | m | |||
| Forward Transconductance | Gfs | VDS=5V, ID=40A | 135 | S | ||
| Diode forward voltage | VSD | ISD=40A,VGS=0V | 0.9 | 1.3 | V | |
| Diode continuous forward current | IS | 190 | A | |||
| Reverse recovery time | trr | IS=40A,dl/dt=100A/s | 55 | nS | ||
| Reverse recovery charge | Qrr | 70 | nC | |||
| Gate resistance | RG | VGS=0V, VDS=0V,F=1MHz | 2.0 | |||
| Input capacitance | Ciss | VGS=0V, VDS=25V, F=1.0MHz | 6010 | pF | ||
| Output capacitance | Coss | 1400 | ||||
| Reverse transfer capacitance | Crss | 675 | ||||
| Turn-on delay time | td(ON) | VDD=25V,ID=90A, VGS=10V,RG=2.7 | 25 | nS | ||
| Turn-on rise time | tr | 102 | ||||
| Turn-off delay time | td(OFF) | 62 | ||||
| Turn-off fall time | tf | 84 | ||||
| Total gate charge | Qg | VDS=40V, VGS=10V, ID=32A,F=1.0MHz | 150 | nC | ||
| Gate-to-source charge | Qgs | 32 | ||||
| Gate-to-drain charge | Qg d | 70 |
2411121112_KIA-Semicon-Tech-KNP2404A_C455982.pdf
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