Power MOSFET KIA Semicon Tech KNF41100A 2.0A 1000V low gate charge and fast recovery diode for power
Key Attributes
Model Number:
KNF41100A
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4pF@25V
Number:
-
Input Capacitance(Ciss):
370pF@0V
Pd - Power Dissipation:
60W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
KNF41100A
Package:
TO-220F
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX41100A is a 2.0A, 1000V N-CHANNEL MOSFET designed for efficient power management. It features low gate charge to minimize switching loss and a fast recovery body diode. This MOSFET is ideal for applications such as adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KIA
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Package | Brand | VDSS (V) | VGSS (V) | ID (A) @ Tc=25C | IDM (A) | EAS (mJ) | PD (W) | TJmax (C) | TSTG (C) | RJC (C/W) | RJA (C/W) | BVDSS (V) | IDSS (uA) | IGSS (nA) | RDS(ON) () @ VGS=10V, ID=1.0A | VGS(TH) (V) | Ciss (pF) | Crss (pF) | Coss (pF) | Qg (nC) | Qgs (nC) | Qgd (nC) | td(ON) (nS) | trise (nS) | td(OFF) (nS) | tfall (nS) | ISD (A) | VSD (V) | trr (ns) | Qrr (uC) |
| KND41100A | TO-252 | KIA | 1000 | 30 | 2.0 | 8.0 | 80 | 60 | 150 | -55 to 150 | 2.08 | 75 | 1000 | 1 | -100 to 100 | 9.6 | 2.0 - 4.0 | 370 | 4.0 | 40 | 15 | 2.1 | 6.0 | 8.0 | 6.0 | 36 | 15 | 2 | -1.5 | 320 | 1.0 |
| KNP41100A | TO-220 | KIA | 1000 | 30 | 2.0 | 8.0 | 80 | 60 | 150 | -55 to 150 | 2.08 | 75 | 1000 | 1 | -100 to 100 | 9.6 | 2.0 - 4.0 | 370 | 4.0 | 40 | 15 | 2.1 | 6.0 | 8.0 | 6.0 | 36 | 15 | 2 | -1.5 | 320 | 1.0 |
| KNF41100A | TO-220F | KIA | 1000 | 30 | 2.0 | 8.0 | 80 | 60 | 150 | -55 to 150 | 2.08 | 75 | 1000 | 1 | -100 to 100 | 9.6 | 2.0 - 4.0 | 370 | 4.0 | 40 | 15 | 2.1 | 6.0 | 8.0 | 6.0 | 36 | 15 | 2 | -1.5 | 320 | 1.0 |
2409302302_KIA-Semicon-Tech-KNF41100A_C2896658.pdf
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